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产品型号74AHC1G00GW的概述

芯片74AHC1G00GW的概述 74AHC1G00GW是一款集成电路，属于74系列逻辑芯片中的一部分。该芯片主要用于逻辑运算，提供了双输入与门逻辑（AND gate）的功能。它具有较高的工作速度和低电源消耗的特性，适用于多种数字电路和系统。由于其结构简单、功能直观，74AHC1G00GW被广泛应用于消费电子、工业自动化、汽车电子、以及计算机外围设备等众多领域。该芯片采用非互补输出形式，两个输入能提供逻辑运算结果，是非常重要的基础构建模块之一。在现代电子产品中，逻辑门的使用几乎无处不在，74AHC1G00GW由于其优异的性能和适应性，成为了设计师和工程师们的常用选择。芯片74AHC1G00GW的详细参数 74AHC1G00GW的技术参数如下： - 逻辑功能：与门 (AND gate) - 电源电压：2.0V 至 5.5V - 输入电压范围：0V 至 Vcc - 输出电压（高电平）：...

产品型号74AHC1G00GW的Datasheet PDF文件预览

INTEGRATED CIRCUITS

DATA SHEET

74AHC1G00; 74AHCT1G00

2-input NAND gate

Product speciﬁcation

2002 May 27

Supersedes data of 2002 Feb 27

Philips Semiconductors

Product speciﬁcation

2-input NAND gate

74AHC1G00; 74AHCT1G00

FEATURES

DESCRIPTION

• Symmetrical output impedance

• High noise immunity

The 74AHC1G/AHCT1G00 is a high-speed Si-gate CMOS

device.

The 74AHC1G/AHCT1G00 provides the 2-input NAND

function.

• ESD protection:

– HBM EIA/JESD22-A114-A exceeds 2000 V

– MM EIA/JESD22-A115-A exceeds 200 V

– CDM EIA/JESD22-C101 exceeds 1000 V.

• Low power dissipation

• Balanced propagation delays

• Very small 5-pin package

• Output capability: standard

• Specified from −40 to +125 °C.

QUICK REFERENCE DATA

GND = 0 V; T_amb= 25 °C; t_r= t_f≤ 3.0 ns.

TYPICAL

SYMBOL

PARAMETER

CONDITIONS

UNIT

AHC1G

3.5

AHCT1G

3.6

t_PHL/t_PLHpropagation delay A and B to Y

C_L= 15 pF; V_CC= 5 V

C_I

input capacitance

1.5

C_PD

power dissipation capacitance

C_L= 50 pF; f = 1 MHz;

notes 1 and 2

Notes

1. C_PDis used to determine the dynamic power dissipation (P_Din µW).

P_D= C_PD× V_CC²× f_i+ (C_L× V_CC²× f_o) where:

f_i= input frequency in MHz;

f_o= output frequency in MHz;

C_L= output load capacitance in pF

V_CC= supply voltage in Volts.

2. The condition is V_I= GND to V_CC

2002 May 27

Philips Semiconductors

Product speciﬁcation

2-input NAND gate

74AHC1G00; 74AHCT1G00

FUNCTION TABLE

See note 1.

INPUTS

OUTPUT

Note

1. H = HIGH voltage level;

L = LOW voltage level.

ORDERING INFORMATION

TYPE NUMBER

PACKAGES

PACKAGE MATERIAL

TEMPERATURE

RANGE

PINS

CODE

MARKING

74AHC1G00GW

74AHCT1G00GW

74AHC1G00GV

74AHCT1G00GV

−40 to +125 °C

SC-88A

SC-74A

plastic

SOT353

SOT753

A00

C00

PINNING

SYMBOL

DESCRIPTION

data input B

data input A

ground (0 V)

data output Y

supply voltage

GND

V_CC

2002 May 27

Philips Semiconductors

Product speciﬁcation

2-input NAND gate

74AHC1G00; 74AHCT1G00

handbook, halfpage

GND

MNA097

MNA096

Fig.1 Pin configuration.

Fig.2 Logic symbol.

handbook, halfpage

MNA098

MNA099

Fig.3 IEC logic symbol.

Fig.4 Logic diagram.

2002 May 27

Philips Semiconductors

Product speciﬁcation

2-input NAND gate

74AHC1G00; 74AHCT1G00

RECOMMENDED OPERATING CONDITIONS

74AHC1G

TYP. MAX. MIN.

74AHCT1G

TYP. MAX.

SYMBOL

PARAMETER

CONDITIONS

UNIT

MIN.

2.0

V_CC

V_I

supply voltage

input voltage

output voltage

5.0

−

5.5

V_CC

4.5

5.0

−

5.5

V_CC

V_O

−

T_amb

operating ambient see DC and AC

−40

+25

+125 −40

+25

+125 °C

temperature

characteristics per device

t_r, t_f

(∆t/∆f)

input rise and fall V_CC= 3.3 ±0.3 V

−

100

−

ns/V

times

V_CC= 5 ±0.5 V

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).

SYMBOL

PARAMETER

supply voltage

CONDITIONS

MIN. MAX. UNIT

V_CC

V_I

−0.5

−

+7.0

−20

±20

±25

±75

input voltage

I_IK

input diode current

V_I< −0.5 V

I_OK

I_O

output diode current

output source or sink current

V_CCor GND current

storage temperature

power dissipation per package

V_O< −0.5 V or V_O> V_CC+ 0.5 V; note 1

−0.5 V < V_O< V_CC+ 0.5 V

−

I_CC

T_stg

P_D

−

−65

−

+150 °C

250 mW

for temperature range from −40 to +125 °C

Note

1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

2002 May 27

Philips Semiconductors

Product speciﬁcation

2-input NAND gate

74AHC1G00; 74AHCT1G00

DC CHARACTERISTICS

Family 74AHC1G

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

TEST CONDITIONS T_amb(°C)

-40 to +85

MIN. TYP. MAX. MIN. MAX. MIN. MAX.

SYMBOL

PARAMETER

-40 to +125 UNIT

V_CC

(V)

OTHER

V_IH

HIGH-level input

voltage

2.0

1.5

2.1

3.85

−

1.5

2.1

3.85

−

1.5

2.1

3.85

−

3.0

5.5

2.0

3.0

5.5

2.0

−

V_IL

LOW-level input

voltage

−

0.5

0.9

1.65

−

0.5

0.9

1.65

−

0.5

0.9

1.65

−

V_OH

HIGH-level output V_I= V_IHor V_IL;

1.9

2.0

1.9

voltage

I_O= −50 µA

V_I= V_IHor V_IL;

I_O= −50 µA

3.0

4.5

3.0

4.5

2.0

3.0

4.5

3.0

4.5

2.9

4.4

2.58

3.94

−

3.0

4.5

−

2.9

4.4

2.48

3.8

−

2.9

4.4

2.40

3.70

−

V_I= V_IHor V_IL;

I_O= −50 µA

−

V_I= V_IHor V_IL;

I_O= −4.0 mA

−

V_I= V_IHor V_IL;

I_O= −8.0 mA

−

V_OL

LOW-level output V_I= V_IHor V_IL;

0.1

0.36

0.1

1.0

0.1

0.44

1.0

0.1

0.55

2.0

voltage

I_O= 50 µA

V_I= V_IHor V_IL;

I_O= 50 µA

−

V_I= V_IHor V_IL;

I_O= 50 µA

−

V_I= V_IHor V_IL;

I_O= 4.0 mA

−

V_I= V_IHor V_IL;

I_O= 8.0 mA

−

I_LI

input leakage

current

V_I= V_CCor GND 5.5

−

µA

I_CC

C_I

quiescent supply V_I= V_CCor GND; 5.5

−

current

I_O= 0

input capacitance

−

1.5

−

2002 May 27

Philips Semiconductors

Product speciﬁcation

2-input NAND gate

74AHC1G00; 74AHCT1G00

Family 74AHCT1G

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

TEST CONDITIONS

OTHER V_CC(V)

4.5 to 5.5 2.0

_amb(°C)

SYMBOL

PARAMETER

−40 to +85 −40 to +125 UNIT

MIN. TYP. MAX. MIN. MAX. MIN. MAX.

V_IH

V_IL

HIGH-level input

voltage

−

2.0

−

2.0

−

LOW-level input

voltage

4.5 to 5.5

4.5

−

0.8

−

0.8

−

0.8

−

V_OH

HIGH-leveloutput V_I= V_IHor V_IL;

4.4

3.94

−

4.5

−

4.4

3.8

−

4.4

3.70

−

voltage

I_O= −50 µA

V_I= V_IHor V_IL;

I_O= −8.0 mA

4.5

−

V_OL

LOW-level output V_I= V_IHor V_IL;

4.5

0.1

0.36

0.1

1.0

1.35

0.1

0.44

1.0

1.5

0.1

0.55

2.0

1.5

voltage

I_O= 50 µA

V_I= V_IHor V_IL;

I_O= 8.0 mA

4.5

−

I_LI

input leakage

current

V_I= V_IHor V_IL

5.5

−

µA

I_CC

∆I_CC

quiescent supply V_I= V_CCor GND; 5.5

−

current

I_O= 0

additional

V_I= 3.4 V;

5.5

−

quiescent supply other inputs at

current per input V_CCor GND;

I_O= 0

C_I

input capacitance

−

1.5

−

2002 May 27

Philips Semiconductors

Product speciﬁcation

2-input NAND gate

74AHC1G00; 74AHCT1G00

AC CHARACTERISTICS

Type 74AHC1G00

GND = 0 V; t_r= t_f≤ 3.0 ns.

TEST CONDITIONS

T_amb(°C)

SYMBOL

PARAMETER

−40 to +85

−40 to +125 UNIT

C_L

WAVEFORMS

(pF)

MIN. TYP. MAX. MIN. MAX. MIN. MAX.

V_CC= 3.0 to 3.6 V; note 1

t_PHL/t_PLHpropagation delay see Figs 5 and 6 15

−

4.5

6.5

7.9

1.0

9.5

1.0

10.5 ns

14.5 ns

A and B to Y

11.4 1.0

13.0 1.0

V_CC= 4.5 to 5.5 V; note 2

t_PHL/t_PLHpropagation delay see Figs 5 and 6 15

−

3.5

4.9

5.5

7.5

1.0

6.5

8.5

1.0

7.0

9.5

A and B to Y

Notes

1. Typical values at V_CC= 3.3 V.

2. Typical values at V_CC= 5 V.

Type 74AHCT1G00

GND = 0 V; t_r= t_f≤ 3.0 ns.

TEST CONDITIONS

T_amb(°C)

SYMBOL

PARAMETER

−40 to +85

−40 to +125 UNIT

C_L

(pF)

WAVEFORMS

MIN. TYP. MAX. MIN. MAX. MIN. MAX.

V_CC= 4.5 to 5.5 V; note 1

_PHL/t_PLHpropagation delay see Figs 5 and 6 15

−

3.6

5.0

6.2

7.9

1.0

7.1

9.0

1.0

8.0

A and B to Y

10.0 ns

Note

1. Typical values at V_CC= 5 V.

2002 May 27

Philips Semiconductors

Product speciﬁcation

2-input NAND gate

74AHC1G00; 74AHCT1G00

AC WAVEFORMS

handbook, halfpage

A, B input

PHL

PLH

Y output

MNA106

V_IINPUT

FAMILY

V_M

REQUIREMENTS INPUT OUTPUT

AHC1G

GND to V_CC

50% V_CC50% V_CC

1.5 V 50% V_CC

AHCT1G GND to 3.0 V

Fig.5 The inputs (A and B) to output (Y) propagation delays.

handbook, halfpage

PULSE

GENERATOR

D.U.T.

MNA101

Definitions for test circuit:

C_L= Load capacitance including jig and probe capacitance (see Chapter “AC characteristics”).

R_T= Termination resistance should be equal to the output impedance Z₀of the pulse generator.

Fig.6 Load circuitry for switching times.

2002 May 27

Philips Semiconductors

Product speciﬁcation

2-input NAND gate

74AHC1G00; 74AHCT1G00

PACKAGE OUTLINES

Plastic surface mounted package; 5 leads

SOT353

M B

detail X

2 mm

scale

DIMENSIONS (mm are the original dimensions)

(2)

UNIT

max

0.30

0.20

1.1

0.8

0.25

0.10

2.2

1.8

1.35

1.15

2.2

2.0

0.45

0.15

0.25

0.15

0.1

1.3

0.65

0.2

0.1

REFERENCES

JEDEC

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

EIAJ

SC-88A

97-02-28

SOT353

2002 May 27

Philips Semiconductors

Product speciﬁcation

2-input NAND gate

74AHC1G00; 74AHCT1G00

Plastic surface mounted package; 5 leads

SOT753

detail X

M B

2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

0.100

0.013

0.40

0.25

1.1

0.9

0.26

0.10

3.1

2.7

1.7

1.3

3.0

2.5

0.6

0.2

0.33

0.23

0.95

0.2

0.1

REFERENCES

JEDEC JEITA

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

SOT753

SC-74A

02-04-16

2002 May 27

Philips Semiconductors

Product speciﬁcation

2-input NAND gate

74AHC1G00; 74AHCT1G00

SOLDERING

If wave soldering is used the following conditions must be

observed for optimal results:

Introduction to soldering surface mount packages

• Use a double-wave soldering method comprising a

turbulent wave with high upward pressure followed by a

smooth laminar wave.

This text gives a very brief insight to a complex technology.

A more in-depth account of soldering ICs can be found in

our “Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).

• For packages with leads on two sides and a pitch (e):

– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the

transport direction of the printed-circuit board;

There is no soldering method that is ideal for all surface

mount IC packages. Wave soldering can still be used for

certain surface mount ICs, but it is not suitable for fine pitch

SMDs. In these situations reflow soldering is

recommended.

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the

printed-circuit board.

Reﬂow soldering

The footprint must incorporate solder thieves at the

downstream end.

Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied

to the printed-circuit board by screen printing, stencilling or

pressure-syringe dispensing before package placement.

• For packages with leads on four sides, the footprint must

be placed at a 45° angle to the transport direction of the

printed-circuit board. The footprint must incorporate

solder thieves downstream and at the side corners.

Several methods exist for reflowing; for example,

convection or convection/infrared heating in a conveyor

type oven. Throughput times (preheating, soldering and

cooling) vary between 100 and 200 seconds depending

on heating method.

During placement and before soldering, the package must

be fixed with a droplet of adhesive. The adhesive can be

applied by screen printing, pin transfer or syringe

dispensing. The package can be soldered after the

adhesive is cured.

Typical reflow peak temperatures range from

215 to 250 °C. The top-surface temperature of the

packages should preferable be kept below 220 °C for

thick/large packages, and below 235 °C for small/thin

packages.

Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal

of corrosive residues in most applications.

Manual soldering

Wave soldering

Fix the component by first soldering two

diagonally-opposite end leads. Use a low voltage (24 V or

less) soldering iron applied to the flat part of the lead.

Contact time must be limited to 10 seconds at up to

300 °C.

Conventional single wave soldering is not recommended

for surface mount devices (SMDs) or printed-circuit boards

with a high component density, as solder bridging and

non-wetting can present major problems.

When using a dedicated tool, all other leads can be

soldered in one operation within 2 to 5 seconds between

270 and 320 °C.

To overcome these problems the double-wave soldering

method was specifically developed.

2002 May 27

Philips Semiconductors

Product speciﬁcation

2-input NAND gate

74AHC1G00; 74AHCT1G00

Suitability of surface mount IC packages for wave and reﬂow soldering methods

SOLDERING METHOD

WAVE

REFLOW⁽²⁾

not suitable suitable

PACKAGE⁽¹⁾

BGA, LBGA, LFBGA, SQFP, TFBGA, VFBGA

HBCC, HBGA, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, not suitable⁽³⁾

HVSON, SMS

suitable

PLCC⁽⁴⁾, SO, SOJ

LQFP, QFP, TQFP

SSOP, TSSOP, VSO

suitable

not recommended⁽⁴⁾⁽⁵⁾suitable

not recommended⁽⁶⁾

suitable

Notes

1. For more detailed information on the BGA packages refer to the “(LF)BGA Application Note” (AN01026); order a copy

from your Philips Semiconductors sales office.

2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum

temperature (with respect to time) and body size of the package, there is a risk that internal or external package

cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the

Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.

3. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder

cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,

the solder might be deposited on the heatsink surface.

4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.

The package footprint must incorporate solder thieves downstream and at the side corners.

5. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not

suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

6. Wave soldering is suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is

definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

2002 May 27

Philips Semiconductors

Product speciﬁcation

2-input NAND gate

74AHC1G00; 74AHCT1G00

DATA SHEET STATUS

PRODUCT

STATUS⁽²⁾

DATA SHEET STATUS⁽¹⁾

DEFINITIONS

Objective data

Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

Preliminary data

Product data

Qualiﬁcation

This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

Production

This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Changes will be

communicated according to the Customer Product/Process Change

Notiﬁcation (CPCN) procedure SNW-SQ-650A.

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

DEFINITIONS

DISCLAIMERS

Short-form specification

The data in a short-form

Life support applications

These products are not

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductors customers using or selling these products

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

at these or at any other conditions above those given in the

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Right to make changes

Philips Semiconductors

reserves the right to make changes, without notice, in the

products, including circuits, standard cells, and/or

software, described or contained herein in order to

improve design and/or performance. Philips

Semiconductors assumes no responsibility or liability for

the use of any of these products, conveys no licence or title

under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that

these products are free from patent, copyright, or mask

work right infringement, unless otherwise specified.

Application information

Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

no representation or warranty that such applications will be

suitable for the specified use without further testing or

modification.

2002 May 27

Philips Semiconductors

Product speciﬁcation

2-input NAND gate

74AHC1G00; 74AHCT1G00

NOTES

2002 May 27

Philips Semiconductors – a worldwide company

Contact information

For additional information please visit http://www.semiconductors.philips.com.

Fax: +31 40 27 24825

For sales ofﬁces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.

SCA74

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

613508/05/pp16

Date of release: 2002 May 27

Document order number: 9397 750 09699

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74AHC1G00GW产品参数

型号:	74AHC1G00GW
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Transferred
IHS 制造商：	NXP SEMICONDUCTORS
零件包装代码：	SOIC
包装说明：	PLASTIC, SC-88A, 5 PIN
针数：	5
Reach Compliance Code：	compliant
HTS代码：	8542.39.00.01
风险等级：	2.8
Is Samacsys：	N
系列：	AHC
JESD-30 代码：	R-PDSO-G5
JESD-609代码：	e3
长度：	2 mm
逻辑集成电路类型：	NAND GATE
最大I（ol）：	0.008 A
湿度敏感等级：	1
功能数量：	1
输入次数：	2
端子数量：	5
最高工作温度：	125 °C
最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY
封装代码：	TSSOP
封装等效代码：	TSSOP5/6,.08
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度（摄氏度）：	260
电源：	2/5.5 V
Prop。Delay @ Nom-Sup：	9.5 ns
传播延迟（tpd）：	14.5 ns
认证状态：	Not Qualified
施密特触发器：	NO
座面最大高度：	1.1 mm
子类别：	Gates
最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	2 V
标称供电电压 (Vsup)：	5 V
表面贴装：	YES
技术：	CMOS
温度等级：	AUTOMOTIVE
端子面层：	Tin (Sn)
端子形式：	GULL WING
端子节距：	0.65 mm
端子位置：	DUAL
处于峰值回流温度下的最长时间：	30
宽度：	1.25 mm
Base Number Matches：	1

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