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  • 74HC00PWR图
  • 北京首天国际有限公司

     该会员已使用本站16年以上
  • 74HC00PWR 现货库存
  • 数量10000 
  • 厂家TI31 
  • 封装STOCK 
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  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • 74HC00PW 现货库存
  • 数量48766 
  • 厂家NXP原装正品 
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  • 深圳市澳亿芯电子

     该会员已使用本站13年以上
  • 74HC00PW 现货库存
  • 数量257 
  • 厂家NXP 
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  • 0755-83227826 QQ:634389814
  • 74HC00PW图
  • 上海意淼电子科技有限公司

     该会员已使用本站14年以上
  • 74HC00PW 现货库存
  • 数量20000 
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  • 74HC00PW图
  • 集好芯城

     该会员已使用本站13年以上
  • 74HC00PW 现货库存
  • 数量19238 
  • 厂家Philips(飞利浦) 
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  • 74HC00PW图
  • 深圳市华斯顿电子科技有限公司

     该会员已使用本站16年以上
  • 74HC00PW 现货库存
  • 数量12500 
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  • 深圳市宗天技术开发有限公司

     该会员已使用本站10年以上
  • 74HC00PW 现货库存
  • 数量20000 
  • 厂家NXP(恩智浦) 
  • 封装N/A 
  • 批号21+ 
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  • 74HC00PW图
  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • 74HC00PW 现货库存
  • 数量48766 
  • 厂家NXP原装正品 
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  • 74HC00PW图
  • 深圳市勤思达科技有限公司

     该会员已使用本站14年以上
  • 74HC00PW 现货库存
  • 数量30000 
  • 厂家Nexperia/安世 
  • 封装TSSOP 
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  • 74HC00PW图
  • 深圳市捷立辉科技有限公司

     该会员已使用本站10年以上
  • 74HC00PW 现货库存
  • 数量38587 
  • 厂家NEXPERIA/安世 
  • 封装TSSOP 
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  • 74HC00PW图
  • 深圳市拓森弘电子有限公司

     该会员已使用本站1年以上
  • 74HC00PW
  • 数量5300 
  • 厂家TI(德州仪器) 
  • 封装 
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  • 全新原装正品,现货库存欢迎咨询
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  • 74HC00PW图
  • 深圳市宏诺德电子科技有限公司

     该会员已使用本站8年以上
  • 74HC00PW
  • 数量68000 
  • 厂家PHI 
  • 封装14TSSOP 
  • 批号22+ 
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  • 74HC00PW图
  • 深圳市誉兴微科技有限公司

     该会员已使用本站4年以上
  • 74HC00PW
  • 数量12600 
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  • 74HC00PW,112图
  • 北京齐天芯科技有限公司

     该会员已使用本站15年以上
  • 74HC00PW,112
  • 数量100000 
  • 厂家Philips Semiconducto 
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  • 深圳市西源信息科技有限公司

     该会员已使用本站9年以上
  • 74HC00PW
  • 数量8800 
  • 厂家NXP/恩智浦 
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  • 74HC00PW112图
  • 北京中其伟业科技有限公司

     该会员已使用本站16年以上
  • 74HC00PW112
  • 数量2304 
  • 厂家Nxp Semiconductors 
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  • 74HC00PW图
  • 深圳市宏世佳电子科技有限公司

     该会员已使用本站13年以上
  • 74HC00PW
  • 数量4816 
  • 厂家PHILIPS 
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  • 74HC00PWR图
  • 北京齐天芯科技有限公司

     该会员已使用本站15年以上
  • 74HC00PWR
  • 数量6000 
  • 厂家TI 
  • 封装TSSOP 
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  • 74HC00PW图
  • 北京元坤伟业科技有限公司

     该会员已使用本站17年以上
  • 74HC00PW
  • 数量5000 
  • 厂家NXP 
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  • 74HC00PW/TSSOP图
  • 北京中其伟业科技有限公司

     该会员已使用本站16年以上
  • 74HC00PW/TSSOP
  • 数量35600 
  • 厂家NXP 
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  • 74HC00PW图
  • 北京元坤伟业科技有限公司

     该会员已使用本站17年以上
  • 74HC00PW
  • 数量5000 
  • 厂家NXP 
  • 封装TSSOP 
  • 批号2024+ 
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  • 74HC00PW图
  • 深圳市芯福林电子有限公司

     该会员已使用本站15年以上
  • 74HC00PW
  • 数量98500 
  • 厂家PHILIPS 
  • 封装TSSOP 
  • 批号23+ 
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  • 74HC00PW图
  • 深圳市创思克科技有限公司

     该会员已使用本站2年以上
  • 74HC00PW
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  • 厂家PHILIPS/飞利浦 
  • 封装TSSOP14 
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  • 74HC00PW图
  • 深圳市芯福林电子有限公司

     该会员已使用本站15年以上
  • 74HC00PW
  • 数量85000 
  • 厂家NXP/恩智浦 
  • 封装 
  • 批号23+ 
  • 真实库存全新原装正品!代理此型号
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  • 0755-23605827 QQ:2881495753
  • 74HC00PW图
  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • 74HC00PW
  • 数量48766 
  • 厂家NXP原装正品 
  • 封装TSSOP14 
  • 批号新批次 
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  • 74HC00PW112图
  • 深圳市一线半导体有限公司

     该会员已使用本站11年以上
  • 74HC00PW112
  • 数量16500 
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  • 深圳市正纳电子有限公司

     该会员已使用本站15年以上
  • 74HC00PW
  • 数量26700 
  • 厂家NXP(恩智浦) 
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  • 深圳市顺鑫诚电子科技有限公司

     该会员已使用本站14年以上
  • 74HC00PW
  • 数量5000 
  • 厂家PHILIPS 
  • 封装TSSOP-14 
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  • 上海意淼电子科技有限公司

     该会员已使用本站14年以上
  • 74HC00PW
  • 数量20000 
  • 厂家NXP 
  • 封装TSSOP14 
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  • 原装现货热卖!请联系吴先生 13681678667
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  • 15618836863 QQ:617677003
  • 74HC00PW图
  • 北京元坤伟业科技有限公司

     该会员已使用本站17年以上
  • 74HC00PW
  • 数量5000 
  • 厂家NXP 
  • 封装TSSOP 
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  • 深圳市凯信扬科技有限公司

     该会员已使用本站7年以上
  • 74HC00PW
  • 数量58200 
  • 厂家NEXPERIA/安世 
  • 封装SOT402 
  • 批号21+ 
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  • 深圳市龙腾新业科技有限公司

     该会员已使用本站17年以上
  • 74HC00PW
  • 数量17665 
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  • 深圳市隆亿诚科技有限公司

     该会员已使用本站3年以上
  • 74HC00PW
  • 数量3253 
  • 厂家NXP/恩智浦 
  • 封装TSSOP 
  • 批号22+ 
  • 支持检测.现货价优!74HC00D
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产品型号74HC00PW的概述

芯片74HC00PW的概述 74HC00PW系列芯片是高性能的逻辑器件,属于74系列逻辑门电路中的一部分,采用CMOS工艺制造。这款芯片包含四个2输入NAND门,能够实现多种逻辑功能,广泛应用于数字电路设计中。以其高速度、低功耗和良好的抗噪声特性而受到设计师的青睐,它尤其适合于高频率和快速响应的应用场景。 74HC00PW的“HC”代表高速度CMOS技术,具有较高的开关速度,并且比传统的TTL逻辑器件消耗更少的功率。这使得74HC00PW在现代电子设备和系统设计中占有一席之地,包括计算机、智能手机、嵌入式系统等多个领域。 芯片74HC00PW的详细参数 1. 逻辑功能: - 四个独立的2输入NAND门 2. 电源电压(Vcc): - 最小值:2V - 最大值:6V 3. 输入电压范围(Vi): - 0V 至 Vcc 4. 输出电流(Io): - 最大输出电流:+- 25 mA(每个引脚...

产品型号74HC00PW的Datasheet PDF文件预览

INTEGRATED CIRCUITS  
DATA SHEET  
74HC00; 74HCT00  
Quad 2-input NAND gate  
Product specification  
2003 Jun 30  
Supersedes data of 1997 Aug 26  
Philips Semiconductors  
Product specification  
Quad 2-input NAND gate  
74HC00; 74HCT00  
FEATURES  
DESCRIPTION  
Complies with JEDEC standard no. 8-1A  
ESD protection:  
The 74HC00/74HCT00 are high-speed Si-gate CMOS  
devices and are pin compatible with low power Schottky  
TTL (LSTTL). They are specified in compliance with  
JEDEC standard no. 7A.  
HBM EIA/JESD22-A114-A exceeds 2000 V  
MM EIA/JESD22-A115-A exceeds 200 V  
Specified from 40 to +85 °C and 40 to +125 °C.  
The 74HC00/74HCT00 provide the 2-input NAND  
function.  
QUICK REFERENCE DATA  
GND = 0 V; Tamb = 25 °C; tr = tf = 6 ns.  
TYPICAL  
SYMBOL  
PARAMETER  
CONDITIONS  
UNIT  
74HC00  
74HCT00  
10  
t
PHL/tPLH  
propagation delay nA, nB to nY  
input capacitance  
CL = 15 pF; VCC = 5 V  
7
ns  
pF  
pF  
CI  
3.5  
22  
3.5  
22  
CPD  
power dissipation capacitance per gate notes 1 and 2  
Notes  
1. CPD is used to determine the dynamic power dissipation (PD in µW).  
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:  
fi = input frequency in MHz;  
fo = output frequency in MHz;  
CL = output load capacitance in pF;  
VCC = supply voltage in Volts;  
N = total load switching outputs;  
Σ(CL × VCC2 × fo) = sum of the outputs.  
2. For 74HC00 the condition is VI = GND to VCC  
.
For 74HCT00 the condition is VI = GND to VCC 1.5 V.  
FUNCTION TABLE  
See note 1.  
INPUT  
OUTPUT  
nA  
L
nB  
nY  
H
L
H
L
L
H
H
H
H
H
L
Note  
1. H = HIGH voltage level;  
L = LOW voltage level.  
2003 Jun 30  
2
Philips Semiconductors  
Product specification  
Quad 2-input NAND gate  
74HC00; 74HCT00  
ORDERING INFORMATION  
PACKAGE  
PACKAGE  
TYPE NUMBER  
TEMPERATURE  
PINS  
MATERIAL  
CODE  
RANGE  
74HC00N  
40 to +125 °C  
40 to +125 °C  
40 to +125 °C  
40 to +125 °C  
40 to +125 °C  
40 to +125 °C  
40 to +125 °C  
40 to +125 °C  
40 to +125 °C  
40 to +125 °C  
14  
14  
14  
14  
14  
14  
14  
14  
14  
14  
DIP14  
DIP14  
plastic  
plastic  
plastic  
plastic  
plastic  
plastic  
plastic  
plastic  
plastic  
plastic  
SOT27-1  
SOT27-1  
74HCT00N  
74HC00D  
SO14  
SOT108-1  
SOT108-1  
SOT337-1  
SOT337-1  
SOT402-1  
SOT402-1  
SOT762-1  
SOT762-1  
74HCT00D  
74HC00DB  
74HCT00DB  
74HC00PW  
74HCT00PW  
74HC00BQ  
74HCT00BQ  
SO14  
SSOP14  
SSOP14  
TSSOP14  
TSSOP14  
DHVQFN14  
DHVQFN14  
PINNING  
PIN  
SYMBOL  
DESCRIPTION  
1
2
1A  
1B  
1Y  
2A  
2B  
2Y  
GND  
3Y  
3A  
3B  
4Y  
4A  
4B  
VCC  
data input  
data input  
data output  
data input  
data input  
data output  
ground (0 V)  
data output  
data input  
data input  
data output  
data input  
data input  
supply voltage  
handbook, halfpage  
1A  
1B  
1
2
3
4
5
6
7
14 V  
CC  
3
13 4B  
12 4A  
11 4Y  
10 3B  
4
1Y  
5
2A  
00  
6
7
2B  
8
2Y  
9
8
3A  
3Y  
9
GND  
10  
11  
12  
13  
14  
MNA210  
Fig.1 Pin configuration DIP14, SO14 and  
(T)SSOP14.  
2003 Jun 30  
3
Philips Semiconductors  
Product specification  
Quad 2-input NAND gate  
74HC00; 74HCT00  
V
1A  
1
handbook, halfpage  
CC  
14  
1B  
2
3
13 4B  
12 4A  
handbook, halfpage  
1Y  
A
B
Y
(1)  
2A  
2B  
2Y  
4
5
6
11 4Y  
10 3B  
GND  
MNA211  
9
3A  
7
8
GND 3Y  
MNA950  
Top view  
(1) The die substrate is attached to this pad using conductive die  
attach material. It can not be used as a supply pin or input.  
Fig.2 Pin configuration DHVQFN14.  
Fig.3 Logic diagram (one gate).  
1
handbook, halfpage  
&
&
&
&
3
6
2
handbook, halfpage  
1
2
1A  
1B  
1Y  
2Y  
3Y  
3
6
8
4
5
4
5
2A  
2B  
9
3A  
9
10 3B  
8
10  
12 4A  
13 4B  
4Y 11  
12  
13  
11  
MNA212  
MNA246  
Fig.4 Function diagram.  
Fig.5 IEC logic symbol.  
2003 Jun 30  
4
Philips Semiconductors  
Product specification  
Quad 2-input NAND gate  
74HC00; 74HCT00  
RECOMMENDED OPERATING CONDITIONS  
74HC00  
TYP. MAX. MIN.  
74HCT00  
UNIT  
SYMBOL  
PARAMETER  
supply voltage  
CONDITIONS  
MIN.  
2.0  
TYP. MAX.  
VCC  
VI  
5.0  
6.0  
4.5  
0
5.0  
5.5  
V
V
V
input voltage  
0
VCC  
VCC  
VCC  
VCC  
VO  
output voltage  
0
0
Tamb  
operating ambient  
temperature  
see DC and AC  
characteristics per  
device  
40  
+25  
+125 40  
+25  
+125 °C  
tr, tf  
input rise and fall times  
VCC = 2.0 V  
VCC = 4.5 V  
1000  
500  
ns  
ns  
ns  
6.0  
6.0  
500  
VCC = 6.0 V  
400  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).  
SYMBOL  
PARAMETER  
supply voltage  
CONDITIONS  
MIN.  
0.5  
MAX.  
+7.0  
UNIT  
VCC  
IIK  
V
input diode current  
output diode current  
VI < 0.5 V or VI > VCC + 0.5 V  
VO < 0.5 V or VO > VCC + 0.5 V  
0.5 V < VO < VCC + 0.5 V  
±20  
±20  
±25  
mA  
mA  
mA  
IOK  
IO  
output source or sink  
current  
I
CC, IGND VCC or GND current  
±50  
mA  
°C  
Tstg  
Ptot  
storage temperature  
power dissipation  
65  
+150  
500  
Tamb = 40 to +125 °C; note 1  
mW  
Note  
1. For DIP14 packages: above 70 °C derate linearly with 12 mW/K.  
For SO14 packages: above 70 °C derate linearly with 8 mW/K.  
For SSOP14 and TSSOP14 packages: above 60 °C derate linearly with 5.5 mW/K.  
For DHVQFN14 packages: above 60 °C derate linearly with 4.5 mW/K.  
2003 Jun 30  
5
Philips Semiconductors  
Product specification  
Quad 2-input NAND gate  
74HC00; 74HCT00  
DC CHARACTERISTICS  
Type 74HC00  
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).  
TEST CONDITIONS  
SYMBOL  
PARAMETER  
MIN.  
TYP.  
MAX.  
UNIT  
OTHER  
VCC (V)  
Tamb = 40 to +85 °C; note 1  
VIH HIGH-level input voltage  
2.0  
1.5  
1.2  
V
4.5  
6.0  
2.0  
4.5  
6.0  
3.15  
4.2  
2.4  
3.2  
0.8  
2.1  
2.8  
V
V
V
V
V
VIL  
LOW-level input voltage  
0.5  
1.35  
1.8  
VOH  
HIGH-level output voltage VI = VIH or VIL  
IO = 20 µA  
IO = 20 µA  
IO = 20 µA  
IO = 4.0 mA  
IO = 5.2 mA  
2.0  
4.5  
6.0  
4.5  
6.0  
1.9  
2.0  
V
V
V
V
V
4.4  
4.5  
5.9  
6.0  
3.84  
5.34  
4.32  
5.81  
VOL  
LOW-level output voltage  
VI = VIH or VIL  
IO = 20 µA  
2.0  
4.5  
6.0  
4.5  
6.0  
6.0  
6.0  
0
0.1  
V
IO = 20 µA  
0
0.1  
V
IO = 20 µA  
0
0.1  
V
IO = 4.0 mA  
IO = 5.2 mA  
VI = VCC or GND  
0.15  
0.16  
0.33  
0.33  
±1.0  
±.5.0  
V
V
ILI  
input leakage current  
µA  
µA  
IOZ  
3-state output OFF current VI = VIH or VIL;  
VO = VCC or GND  
ICC  
quiescent supply current  
VI = VCC or GND; IO = 0 6.0  
20  
µA  
2003 Jun 30  
6
Philips Semiconductors  
Product specification  
Quad 2-input NAND gate  
74HC00; 74HCT00  
TEST CONDITIONS  
OTHER  
SYMBOL  
PARAMETER  
MIN.  
TYP.  
MAX.  
UNIT  
VCC (V)  
Tamb = 40 to +125 °C  
VIH  
HIGH-level input voltage  
LOW-level input voltage  
2.0  
4.5  
6.0  
2.0  
4.5  
6.0  
1.5  
V
3.15  
4.2  
V
V
V
V
V
VIL  
0.5  
1.35  
1.8  
VOH  
HIGH-level output voltage VI = VIH or VIL  
IO = 20 µA  
IO = 20 µA  
IO = 20 µA  
IO = 4.0 mA  
IO = 5.2 mA  
2.0  
4.5  
6.0  
4.5  
6.0  
1.9  
4.4  
5.9  
3.7  
5.2  
V
V
V
V
V
VOL  
LOW-level output voltage  
VI = VIH or VIL  
IO = 20 µA  
2.0  
4.5  
6.0  
4.5  
6.0  
6.0  
6.0  
0.1  
V
IO = 20 µA  
0.1  
V
IO = 20 µA  
0.1  
V
IO = 4.0 mA  
IO = 5.2 mA  
VI = VCC or GND  
0.4  
V
0.4  
V
ILI  
input leakage current  
±1.0  
±10.0  
µA  
µA  
IOZ  
3-state output OFF current VI = VIH or VIL;  
VO = VCC or GND  
ICC  
quiescent supply current  
VI = VCC or GND; IO = 0 6.0  
40  
µA  
Note  
1. All typical values are measured at Tamb = 25 °C.  
2003 Jun 30  
7
Philips Semiconductors  
Product specification  
Quad 2-input NAND gate  
74HC00; 74HCT00  
Type 74HCT00  
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).  
TEST CONDITIONS  
SYMBOL  
PARAMETER  
MIN.  
TYP.  
MAX. UNIT  
OTHER  
VCC (V)  
Tamb = 40 to +85 °C; note 1  
VIH  
VIL  
HIGH-level input voltage  
4.5 to 5.5 2.0  
1.6  
V
V
LOW-level input voltage  
HIGH-level output voltage  
4.5 to 5.5  
1.2  
0.8  
VOH  
VI = VIH or VIL  
IO = 20 µA  
4.5  
4.5  
4.4  
4.5  
V
V
IO = 4.0 mA  
VI = VIH or VIL  
IO = 20 µA  
3.84  
4.32  
VOL  
LOW-level output voltage  
4.5  
4.5  
5.5  
5.5  
0
0.1  
V
IO = 4.0 mA  
0.15  
0.33  
±1.0  
±5.0  
V
ILI  
input leakage current  
VI = VCC or GND  
µA  
µA  
IOZ  
3-state output OFF current  
VI = VIH or VIL;  
VO = VCC or GND;  
IO = 0  
ICC  
quiescent supply current  
VI = VCC or GND; 5.5  
IO = 0  
20  
µA  
µA  
ICC  
additional supply current per input VI = VCC 2.1 V;  
4.5 to 5.5  
150  
675  
IO = 0  
Tamb = 40 to +125 °C  
VIH  
VIL  
HIGH-level input voltage  
4.5 to 5.5 2.0  
V
V
LOW-level input voltage  
HIGH-level output voltage  
4.5 to 5.5  
0.8  
VOH  
VI = VIH or VIL  
IO = 20 µA  
4.5  
4.5  
4.4  
3.7  
V
V
IO = 4.0 mA  
VI = VIH or VIL  
IO = 20 µA  
VOL  
LOW-level output voltage  
4.5  
4.5  
5.5  
5.5  
0.1  
V
IO = 4.0 mA  
0.4  
V
ILI  
input leakage current  
VI = VCC or GND  
±1.0  
±10  
µA  
µA  
IOZ  
3-state output OFF current  
VI = VIH or VIL;  
VO = VCC or GND;  
IO = 0  
ICC  
quiescent supply current  
VI = VCC or GND; 5.5  
IO = 0  
40  
µA  
µA  
ICC  
additional supply current per input VI = VCC 2.1 V;  
4.5 to 5.5  
735  
IO = 0  
Note  
1. All typical values are measured at Tamb = 25 °C.  
2003 Jun 30  
8
Philips Semiconductors  
Product specification  
Quad 2-input NAND gate  
74HC00; 74HCT00  
AC CHARACTERISTICS  
Type 74HC00  
GND = 0 V; tr = tf = 6 ns; CL = 50 pF.  
TEST CONDITIONS  
WAVEFORMS VCC (V)  
SYMBOL  
PARAMETER  
MIN.  
TYP. MAX. UNIT  
Tamb = 40 to +85 °C; note 1  
tPHL/tPLH  
propagation delay nA, nB to nY  
output transition time  
see Fig.6  
2.0  
4.5  
6.0  
2.0  
4.5  
6.0  
25  
9
115  
23  
20  
95  
19  
16  
ns  
ns  
ns  
ns  
ns  
ns  
see Fig.6  
see Fig.6  
7
tTHL/tTLH  
19  
7
6
Tamb = 40 to +125 °C  
tPHL/tPLH  
propagation delay nA, nB to nY  
see Fig.6  
see Fig.6  
see Fig.6  
2.0  
4.5  
6.0  
2.0  
4.5  
6.0  
135  
27  
ns  
ns  
ns  
ns  
ns  
ns  
23  
tTHL/tTLH  
output transition time  
110  
22  
19  
Note  
1. All typical values are measured at Tamb = 25 °C.  
Type 74HCT00  
GND = 0 V; tr = tf = 6 ns; CL = 50 pF  
TEST CONDITIONS  
WAVEFORMS  
SYMBOL  
PARAMETER  
MIN.  
TYP  
MAX. UNIT  
VCC (V)  
Tamb = 40 to +85 °C; note 1  
t
PHL/tPLH  
THL/tTLH  
propagation delay nA, nB to nY  
output transition time  
see Fig.6  
4.5  
4.5  
12  
24  
29  
ns  
ns  
t
Tamb = 40 to +125 °C  
tPHL/tPLH propagation delay nA, nB to nY  
THL/tTLH output transition time  
see Fig.6  
4.5  
4.5  
29  
22  
ns  
ns  
t
Note  
1. All typical values are measured at Tamb = 25 °C.  
2003 Jun 30  
9
Philips Semiconductors  
Product specification  
Quad 2-input NAND gate  
74HC00; 74HCT00  
AC WAVEFORMS  
V
handbook, halfpage  
I
V
nA, nB input  
M
GND  
t
t
PHL  
PLH  
V
OH  
V
nY output  
M
V
OL  
t
t
TLH  
MNA218  
THL  
74HC00: VM = 50%; VI = GND to VCC  
.
74HCT00: VM = 1.3 V; VI = GND to 3 V.  
Fig.6 Waveforms showing the input (nA, nB) to output (nY) propagation delays.  
2003 Jun 30  
10  
Philips Semiconductors  
Product specification  
Quad 2-input NAND gate  
74HC00; 74HCT00  
PACKAGE OUTLINES  
DIP14: plastic dual in-line package; 14 leads (300 mil)  
SOT27-1  
D
M
E
A
2
A
A
1
L
c
e
w M  
Z
b
1
(e )  
1
b
M
H
14  
8
pin 1 index  
E
1
7
0
5
10 mm  
scale  
DIMENSIONS (inch dimensions are derived from the original mm dimensions)  
(1)  
A
A
A
2
(1)  
(1)  
Z
1
UNIT  
mm  
b
b
c
D
E
e
e
L
M
M
H
w
1
1
E
max.  
min.  
max.  
max.  
1.73  
1.13  
0.53  
0.38  
0.36  
0.23  
19.50  
18.55  
6.48  
6.20  
3.60  
3.05  
8.25  
7.80  
10.0  
8.3  
4.2  
0.51  
3.2  
2.54  
0.1  
7.62  
0.3  
0.254  
0.01  
2.2  
0.068  
0.044  
0.021  
0.015  
0.014  
0.009  
0.77  
0.73  
0.26  
0.24  
0.14  
0.12  
0.32  
0.31  
0.39  
0.33  
inches  
0.17  
0.02  
0.13  
0.087  
Note  
1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
JEITA  
99-12-27  
03-02-13  
SOT27-1  
050G04  
MO-001  
SC-501-14  
2003 Jun 30  
11  
Philips Semiconductors  
Product specification  
Quad 2-input NAND gate  
74HC00; 74HCT00  
SO14: plastic small outline package; 14 leads; body width 3.9 mm  
SOT108-1  
D
E
A
X
c
y
H
v
M
A
E
Z
8
14  
Q
A
2
A
(A )  
3
A
1
pin 1 index  
θ
L
p
L
1
7
e
detail X  
w
M
b
p
0
2.5  
scale  
5 mm  
DIMENSIONS (inch dimensions are derived from the original mm dimensions)  
A
(1)  
(1)  
(1)  
UNIT  
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.  
0.25  
0.10  
1.45  
1.25  
0.49  
0.36  
0.25  
0.19  
8.75  
8.55  
4.0  
3.8  
6.2  
5.8  
1.0  
0.4  
0.7  
0.6  
0.7  
0.3  
mm  
1.75  
1.27  
0.05  
1.05  
0.25  
0.01  
0.25  
0.1  
0.25  
0.01  
8o  
0o  
0.010 0.057  
0.004 0.049  
0.019 0.0100 0.35  
0.014 0.0075 0.34  
0.16  
0.15  
0.244  
0.228  
0.039 0.028  
0.016 0.024  
0.028  
0.012  
inches  
0.041  
0.01 0.004  
0.069  
Note  
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
JEITA  
99-12-27  
03-02-19  
SOT108-1  
076E06  
MS-012  
2003 Jun 30  
12  
Philips Semiconductors  
Product specification  
Quad 2-input NAND gate  
74HC00; 74HCT00  
SSOP14: plastic shrink small outline package; 14 leads; body width 5.3 mm  
SOT337-1  
D
E
A
X
c
y
H
v
M
A
E
Z
8
14  
Q
A
2
A
(A )  
3
A
1
pin 1 index  
θ
L
p
L
7
1
detail X  
w M  
b
p
e
0
2.5  
5 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
(1)  
(1)  
(1)  
UNIT  
A
A
A
b
c
D
E
e
H
L
L
Q
v
w
y
Z
θ
p
p
1
2
3
E
max.  
8o  
0o  
0.21  
0.05  
1.80  
1.65  
0.38  
0.25  
0.20  
0.09  
6.4  
6.0  
5.4  
5.2  
7.9  
7.6  
1.03  
0.63  
0.9  
0.7  
1.4  
0.9  
mm  
2
0.25  
0.65  
1.25  
0.2  
0.13  
0.1  
Note  
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
JEITA  
99-12-27  
03-02-19  
SOT337-1  
MO-150  
2003 Jun 30  
13  
Philips Semiconductors  
Product specification  
Quad 2-input NAND gate  
74HC00; 74HCT00  
TSSOP14: plastic thin shrink small outline package; 14 leads; body width 4.4 mm  
SOT402-1  
D
E
A
X
c
y
H
v
M
A
E
Z
8
14  
Q
(A )  
3
A
2
A
A
1
pin 1 index  
θ
L
p
L
1
7
detail X  
w
M
b
p
e
0
2.5  
5 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
(1)  
(2)  
(1)  
UNIT  
A
A
A
b
c
D
E
e
H
L
L
Q
v
w
y
Z
θ
1
2
3
p
E
p
max.  
8o  
0o  
0.15  
0.05  
0.95  
0.80  
0.30  
0.19  
0.2  
0.1  
5.1  
4.9  
4.5  
4.3  
6.6  
6.2  
0.75  
0.50  
0.4  
0.3  
0.72  
0.38  
mm  
1.1  
0.65  
0.25  
1
0.2  
0.13  
0.1  
Notes  
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.  
2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
JEITA  
99-12-27  
03-02-18  
SOT402-1  
MO-153  
2003 Jun 30  
14  
Philips Semiconductors  
Product specification  
Quad 2-input NAND gate  
74HC00; 74HCT00  
DHVQFN14: plastic dual in-line compatible thermal enhanced very thin quad flat package; no leads;  
14 terminals; body 2.5 x 3 x 0.85 mm  
SOT762-1  
B
A
D
A
A
1
E
c
detail X  
terminal 1  
index area  
C
terminal 1  
index area  
e
1
y
y
e
b
v
M
C
C
A
B
C
1
w
M
2
6
L
1
7
8
E
h
e
14  
13  
9
D
h
X
0
2.5  
5 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
(1)  
A
(1)  
(1)  
UNIT  
A
b
c
E
e
e
1
y
D
D
E
L
v
w
y
1
h
h
1
max.  
0.05 0.30  
0.00 0.18  
3.1  
2.9  
1.65  
1.35  
2.6  
2.4  
1.15  
0.85  
0.5  
0.3  
mm  
0.05  
0.1  
1
0.2  
0.5  
2
0.1  
0.05  
Note  
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
JEITA  
02-10-17  
03-01-27  
SOT762-1  
- - -  
MO-241  
- - -  
2003 Jun 30  
15  
Philips Semiconductors  
Product specification  
Quad 2-input NAND gate  
74HC00; 74HCT00  
DATA SHEET STATUS  
DATA SHEET  
STATUS(1)  
PRODUCT  
STATUS(2)(3)  
LEVEL  
DEFINITION  
I
Objective data  
Development This data sheet contains data from the objective specification for product  
development. Philips Semiconductors reserves the right to change the  
specification in any manner without notice.  
II  
Preliminary data Qualification  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product.  
III  
Product data  
Production  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in order  
to improve the design, manufacturing and supply. Relevant changes will  
be communicated via a Customer Product/Process Change Notification  
(CPCN).  
Notes  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was  
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.  
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.  
DEFINITIONS  
DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes in the products -  
including circuits, standard cells, and/or software -  
described or contained herein in order to improve design  
and/or performance. When the product is in full production  
(status ‘Production’), relevant changes will be  
Application information  
Applications that are  
communicated via a Customer Product/Process Change  
Notification (CPCN). Philips Semiconductors assumes no  
responsibility or liability for the use of any of these  
products, conveys no licence or title under any patent,  
copyright, or mask work right to these products, and  
makes no representations or warranties that these  
products are free from patent, copyright, or mask work  
right infringement, unless otherwise specified.  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
2003 Jun 30  
16  
Philips Semiconductors – a worldwide company  
Contact information  
For additional information please visit http://www.semiconductors.philips.com.  
Fax: +31 40 27 24825  
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.  
© Koninklijke Philips Electronics N.V. 2003  
SCA75  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
613508/03/pp17  
Date of release: 2003 Jun 30  
Document order number: 9397 750 11258  
配单直通车
74HC00PW产品参数
型号:74HC00PW
是否Rohs认证: 符合
生命周期:Active
IHS 制造商:NEXPERIA
包装说明:TSSOP-14
Reach Compliance Code:compliant
HTS代码:8542.39.00.01
风险等级:5.57
Is Samacsys:N
系列:HC/UH
JESD-30 代码:R-PDSO-G14
JESD-609代码:e4
长度:5 mm
逻辑集成电路类型:NAND GATE
湿度敏感等级:1
功能数量:4
输入次数:2
端子数量:14
最高工作温度:125 °C
最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):260
传播延迟(tpd):135 ns
座面最大高度:1.1 mm
最大供电电压 (Vsup):6 V
最小供电电压 (Vsup):2 V
标称供电电压 (Vsup):5 V
表面贴装:YES
技术:CMOS
温度等级:AUTOMOTIVE
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING
端子节距:0.65 mm
端子位置:DUAL
处于峰值回流温度下的最长时间:30
宽度:4.4 mm
Base Number Matches:1
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