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产品型号74HCT1G04GW的概述

芯片74HCT1G04GW的概述 74HCT1G04GW是一款单个反相器（NOT门）集成电路，是74系列中的一种高性能逻辑器件。此器件特别适合在低功耗和高速度应用中使用，具有良好的噪声容忍度。74HCT系列是以TTL电平逻辑设计而成，能够与其他TTL及CMOS设备兼容，尤其在与旧有系统集成时，可以看到它的广泛应用。它的工作电压范围广泛，适合多种不同的电子应用，尤其是在面对严苛环境时，表现出优秀的可靠性。芯片74HCT1G04GW的详细参数 74HCT1G04GW的技术参数可以通过以下几个方面进行详细说明： 1. 工作电压：适合在2.0V到5.5V之间正常工作，具有良好的性能表现。 2. 输入电流：每个输入端口的最大输入电流为20μA，确保在高频操作时不产生过大的负载。 3. 输出电流：每个输出端口的最大输出电流为25mA，适合驱动多个下级电路。 4. 逻辑电平：典型的逻辑“高”电平为...

产品型号74HCT1G04GW的Datasheet PDF文件预览

INTEGRATED CIRCUITS

DATA SHEET

74HC1G04; 74HCT1G04

Inverter

Product speciﬁcation

2002 May 17

Supersedes data of 2001 Mar 02

Philips Semiconductors

Product speciﬁcation

Inverter

74HC1G04; 74HCT1G04

FEATURES

DESCRIPTION

• Wide supply voltage range from 2.0 to 6.0 V

• Symmetrical output impedance

• High noise immunity

The 74HC1G/HCT1G04 is a high-speed Si-gate CMOS

device.

The 74HC1G/HCT1G04 provides the inverting buffer. The

standard output currents are half the values compared to

the 74HC/HCT04.

• Low power dissipation

• Balanced propagation delays

• Very small 5 pins package

• Output capability: standard.

QUICK REFERENCE DATA

GND = 0 V; T_amb= 25 °C; t_r= t_f≤ 6.0 ns.

TYPICAL

SYMBOL

PARAMETER

CONDITIONS

UNIT

HC1G

HCT1G

t_PHL/t_PLHpropagation delay A to Y

C_L= 15 pF; V_CC= 5 V

C_I

input capacitance

1.5

C_PD

power dissipation capacitance

notes 1 and 2

Notes

1. C_PDis used to determine the dynamic power dissipation (P_Din µW).

P_D= C_PD× V_CC²× f_i+ ∑ (C_L× V_CC²× f_o) where:

f_i= input frequency in MHz;

f_o= output frequency in MHz;

C_L= output load capacitance in pF;

V_CC= supply voltage in Volts;

∑ (C_L× V_CC²× f_o) = sum of outputs.

2. For HC1G the condition is V_I= GND to V_CC

For HCT1G the condition is V_I= GND to V_CC− 1.5 V.

FUNCTION TABLE

See note 1.

INPUT

OUTPUT

Note

1. H = HIGH voltage level;

L = LOW voltage level.

2002 May 17

Philips Semiconductors

Product speciﬁcation

Inverter

74HC1G04; 74HCT1G04

ORDERING INFORMATION

TYPE NUMBER

PACKAGES

PACKAGE MATERIAL

TEMPERATURE

PINS

CODE

MARKING

RANGE

74HC1G04GW

74HCT1G04GW

74HC1G04GV

74HCT1G04GV

−40 to +125 °C

SC-88A

SC-74A

plastic

SOT353

SOT753

H04

T04

PINNING

SYMBOL

DESCRIPTION

n.c.

not connected

data input A

GND

ground (0 V)

data output Y

supply voltage

V_CC

handbook, halfpage

n.c.

handbook, halfpage

GND

MNA108

MNA107

Fig.1 Pin configuration.

Fig.2 Logic symbol.

handbook, halfpage

MNA110

MNA109

Fig.3 IEC logic symbol.

Fig.4 Logic diagram.

2002 May 17

Philips Semiconductors

Product speciﬁcation

Inverter

74HC1G04; 74HCT1G04

RECOMMENDED OPERATING CONDITIONS

74HC1G04

74HCT1G04

UNIT

SYMBOL

PARAMETER

supply voltage

CONDITIONS

MIN.

2.0

TYP. MAX. MIN.

TYP. MAX.

V_CC

V_I

5.0

−

6.0

4.5

5.0

5.5

input voltage

V_CC

−

V_CC

V_O

output voltage

−

T_amb

operating ambient

temperature

see DC and AC

characteristics per

device

−40

+25

+125 −40

+25

+125 °C

t_r, t_f

input rise and fall times V_CC= 2.0 V

V_CC= 4.5 V

−

1000

500

−

500

−

V_CC= 6.0 V

400

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).

SYMBOL

PARAMETER

supply voltage

CONDITIONS

MIN. MAX. UNIT

V_CC

I_IK

−0.5

−

+7.0

±20

input diode current

V_I< −0.5 V or V_I> V_CC+ 0.5 V; note 1

I_OK

I_O

output diode current

_O< −0.5 V or V_O> V_CC+ 0.5 V; note 1

−

output source or sink current

V_CCor GND current

−0.5 V < V_O< V_CC+ 0.5 V; note 1

−

±12.5 mA

±25 mA

+150 °C

200 mW

I_CC

T_stg

P_D

note 1

−

storage temperature

−65

−

power dissipation per package

for temperature range from −40 to +125 °C;

note 2

Notes

1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

2. Above 55 °C the value of P_Dderates linearly with 2.5 mW/K.

2002 May 17

Philips Semiconductors

Product speciﬁcation

Inverter

74HC1G04; 74HCT1G04

DC CHARACTERISTICS

Family 74HC1G04

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

TEST CONDITIONS T_amb(°C)

SYMBOL

PARAMETER

−40 to +85

−40 to +125

MIN. MAX.

1.5

UNIT

OTHER

V_CC(V)

MIN. TYP.⁽¹⁾MAX.

V_IH

HIGH-level input voltage

2.0

4.5

6.0

2.0

4.5

6.0

2.0

1.5

3.15

4.2

−

1.2

2.4

3.2

0.8

2.1

2.8

2.0

−

3.15

4.2

−

V_IL

LOW-level input voltage

0.5

1.35

1.8

−

0.5

1.35

1.8

−

V_OH

HIGH-level output

voltage

V_I= V_IHor V_IL;

I_O= −20 µA

1.9

V_I= V_IHor V_IL;

I_O= −20 µA

4.5

6.0

4.5

6.0

2.0

4.5

6.0

4.5

6.0

4.4

5.9

4.13

5.63

−

4.5

6.0

4.32

5.81

−

4.4

5.9

3.7

5.2

−

V_I= V_IHor V_IL;

I_O= −20 µA

−

V_I= V_IHor V_IL;

I_O= −2.0 mA

−

V_I= V_IHor V_IL;

I_O= −2.6 mA

−

V_OL

LOW-level output

voltage

V_I= V_IHor V_IL;

I_O= 20 µA

0.1

0.33

0.1

0.4

V_I= V_IHor V_IL:

I_O= −20 µA

−

V_I= V_IHor V_IL:

I_O= −20 µA

−

V_I= V_IHor V_IL;

I_O= 2.0 mA

−

0.15

0.16

−

V_I= V_IHor V_IL;

I_O= 2.6 mA

−

I_LI

input leakage current

V_I= V_CCor GND 6.0

−

1.0

−

1.0

µA

I_CC

quiescent supply

current

V_I= V_CCor GND; 6.0

I_O= 0

Note

1. All typical values are measured at T_amb= 25 °C.

2002 May 17

Philips Semiconductors

Product speciﬁcation

Inverter

74HC1G04; 74HCT1G04

Family 74HCT1G04

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

TEST CONDITIONS

T_amb(°C)

SYMBOL

PARAMETER

−40 to +85

−40 to +125

MIN. MAX.

2.0

UNIT

OTHER

V_CC(V)

4.5 to 5.5 2.0

MIN. TYP.⁽¹⁾MAX.

V_IH

V_IL

HIGH-level input

voltage

1.6

1.2

4.5

4.32

−

LOW-level input

voltage

4.5 to 5.5

4.5

−

0.8

−

0.8

−

V_OH

HIGH-level output

voltage

V_I= V_IHor V_IL;

I_O= −20 µA

4.4

4.13

−

4.4

3.7

−

V_I= V_IHor V_IL;

I_O= −2.0 mA

4.5

−

V_OL

LOW-level output

voltage

V_I= V_IHor V_IL;

I_O= 20 µA

4.5

0.1

0.33

0.1

0.4

V_I= V_IHor V_IL;

I_O= 2.0 mA

4.5

−

0.15

−

I_LI

input leakage current V_I= V_CCor GND 5.5

−

1.0

−

1.0

µA

I_CC

quiescent supply

current

V_I= V_CCor GND; 5.5

I_O= 0

∆I_CC

additional supply

current per input

V_I= V_CC− 2.1 V; 4.5 to 5.5

I_O= 0

−

500

−

850

µA

Note

1. All typical values are measured at T_amb= 25 °C.

2002 May 17

Philips Semiconductors

Product speciﬁcation

Inverter

74HC1G04; 74HCT1G04

AC CHARACTERISTICS

Type 74HC1G04

GND = 0 V; t_r= t_f≤ 6.0 ns; C_L= 50 pF.

TEST CONDITIONS

_amb(°C)

−40 to +85

MIN. TYP.⁽¹⁾MAX. MIN. MAX.

SYMBOL

PARAMETER

−40 to +125

UNIT

WAVEFORMS

V_CC(V)

_PHL/t_PLHpropagation

delay A to Y

see Figs 5 and 6

2.0

4.5

6.0

−

105

−

135

Note

1. All typical values are measured at T_amb= 25 °C.

Type 74HCT1G04

GND = 0 V; t_r= t_f≤ 6.0 ns; C_L= 50 pF.

TEST CONDITIONS

T_amb(°C)

SYMBOL

PARAMETER

−40 to +85

−40 to +125

UNIT

WAVEFORMS

V_CC(V)

4.5

MIN. TYP.⁽¹⁾MAX. MIN. MAX.

10 24 27 ns

t_PHL/t_PLHpropagation

delay A to Y

see Figs 5 and 6

−

Note

1. All typical values are measured at T_amb= 25 °C.

2002 May 17

Philips Semiconductors

Product speciﬁcation

Inverter

74HC1G04; 74HCT1G04

AC WAVEFORMS

handbook, halfpage

A input

PULSE

GENERATOR

D.U.T.

PHL

PLH

Y output

MNA101

MNA111

Definitions for test circuit:

C_L= Load capacitance including jig and probe capacitance

(see “AC characteristics”).

For HC1G04: V_M= 50% and V_I= GND to V_CC

For HCT1G04: V_M= 1.3 V and V_I= GND to 3.0 V.

R_T= Termination resistance should be equal to the output

impedance Z_oof the pulse generator.

Fig.5 The input (A) to output (Y) propagation

delays.

Fig.6 Load circuitry for switching times.

2002 May 17

Philips Semiconductors

Product speciﬁcation

Inverter

74HC1G04; 74HCT1G04

PACKAGE OUTLINES

Plastic surface mounted package; 5 leads

SOT353

M B

detail X

2 mm

scale

DIMENSIONS (mm are the original dimensions)

(2)

UNIT

max

0.30

0.20

1.1

0.8

0.25

0.10

2.2

1.8

1.35

1.15

2.2

2.0

0.45

0.15

0.25

0.15

0.1

1.3

0.65

0.2

0.1

REFERENCES

JEDEC

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

EIAJ

SC-88A

97-02-28

SOT353

2002 May 17

Philips Semiconductors

Product speciﬁcation

Inverter

74HC1G04; 74HCT1G04

Plastic surface mounted package; 5 leads

SOT753

detail X

M B

2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

0.100

0.013

0.40

0.25

1.1

0.9

0.26

0.10

3.1

2.7

1.7

1.3

3.0

2.5

0.6

0.2

0.33

0.23

0.95

0.2

0.1

REFERENCES

JEDEC JEITA

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

SOT753

SC-74A

02-04-16

2002 May 17

Philips Semiconductors

Product speciﬁcation

Inverter

74HC1G04; 74HCT1G04

SOLDERING

If wave soldering is used the following conditions must be

observed for optimal results:

Introduction to soldering surface mount packages

• Use a double-wave soldering method comprising a

turbulent wave with high upward pressure followed by a

smooth laminar wave.

This text gives a very brief insight to a complex technology.

A more in-depth account of soldering ICs can be found in

our “Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).

• For packages with leads on two sides and a pitch (e):

– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the

transport direction of the printed-circuit board;

There is no soldering method that is ideal for all surface

mount IC packages. Wave soldering can still be used for

certain surface mount ICs, but it is not suitable for fine pitch

SMDs. In these situations reflow soldering is

recommended.

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the

printed-circuit board.

Reﬂow soldering

The footprint must incorporate solder thieves at the

downstream end.

Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied

to the printed-circuit board by screen printing, stencilling or

pressure-syringe dispensing before package placement.

• For packages with leads on four sides, the footprint must

be placed at a 45° angle to the transport direction of the

printed-circuit board. The footprint must incorporate

solder thieves downstream and at the side corners.

Several methods exist for reflowing; for example,

convection or convection/infrared heating in a conveyor

type oven. Throughput times (preheating, soldering and

cooling) vary between 100 and 200 seconds depending

on heating method.

During placement and before soldering, the package must

be fixed with a droplet of adhesive. The adhesive can be

applied by screen printing, pin transfer or syringe

dispensing. The package can be soldered after the

adhesive is cured.

Typical reflow peak temperatures range from

215 to 250 °C. The top-surface temperature of the

packages should preferable be kept below 220 °C for

thick/large packages, and below 235 °C for small/thin

packages.

Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal

of corrosive residues in most applications.

Manual soldering

Wave soldering

Fix the component by first soldering two

diagonally-opposite end leads. Use a low voltage (24 V or

less) soldering iron applied to the flat part of the lead.

Contact time must be limited to 10 seconds at up to

300 °C.

Conventional single wave soldering is not recommended

for surface mount devices (SMDs) or printed-circuit boards

with a high component density, as solder bridging and

non-wetting can present major problems.

When using a dedicated tool, all other leads can be

soldered in one operation within 2 to 5 seconds between

270 and 320 °C.

To overcome these problems the double-wave soldering

method was specifically developed.

2002 May 17

Philips Semiconductors

Product speciﬁcation

Inverter

74HC1G04; 74HCT1G04

Suitability of surface mount IC packages for wave and reﬂow soldering methods

SOLDERING METHOD

WAVE

REFLOW⁽²⁾

not suitable suitable

PACKAGE⁽¹⁾

BGA, LBGA, LFBGA, SQFP, TFBGA, VFBGA

HBCC, HBGA, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, not suitable⁽³⁾

HVSON, SMS

suitable

PLCC⁽⁴⁾, SO, SOJ

LQFP, QFP, TQFP

SSOP, TSSOP, VSO

suitable

not recommended⁽⁴⁾⁽⁵⁾suitable

not recommended⁽⁶⁾

suitable

Notes

1. For more detailed information on the BGA packages refer to the “(LF)BGA Application Note” (AN01026); order a copy

from your Philips Semiconductors sales office.

2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum

temperature (with respect to time) and body size of the package, there is a risk that internal or external package

cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the

Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.

3. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder

cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,

the solder might be deposited on the heatsink surface.

4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.

The package footprint must incorporate solder thieves downstream and at the side corners.

5. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not

suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

6. Wave soldering is suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is

definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

2002 May 17

Philips Semiconductors

Product speciﬁcation

Inverter

74HC1G04; 74HCT1G04

DATA SHEET STATUS

PRODUCT

STATUS⁽²⁾

DATA SHEET STATUS⁽¹⁾

DEFINITIONS

Objective data

Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

Preliminary data

Product data

Qualiﬁcation

This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

Production

This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Changes will be

communicated according to the Customer Product/Process Change

Notiﬁcation (CPCN) procedure SNW-SQ-650A.

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

DEFINITIONS

DISCLAIMERS

Short-form specification

The data in a short-form

Life support applications

These products are not

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductors customers using or selling these products

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

at these or at any other conditions above those given in the

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Right to make changes

Philips Semiconductors

reserves the right to make changes, without notice, in the

products, including circuits, standard cells, and/or

software, described or contained herein in order to

improve design and/or performance. Philips

Semiconductors assumes no responsibility or liability for

the use of any of these products, conveys no licence or title

under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that

these products are free from patent, copyright, or mask

work right infringement, unless otherwise specified.

Application information

Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

no representation or warranty that such applications will be

suitable for the specified use without further testing or

modification.

2002 May 17

Philips Semiconductors

Product speciﬁcation

Inverter

74HC1G04; 74HCT1G04

NOTES

2002 May 17

Philips Semiconductors

Product speciﬁcation

Inverter

74HC1G04; 74HCT1G04

NOTES

2002 May 17

Philips Semiconductors – a worldwide company

Contact information

For additional information please visit http://www.semiconductors.philips.com.

Fax: +31 40 27 24825

For sales ofﬁces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.

SCA74

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

613508/03/pp16

Date of release: 2002 May 17

Document order number: 9397 750 09716

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74HCT1G04GW产品参数

型号:	74HCT1G04GW
是否Rohs认证：	符合
生命周期：	Transferred
IHS 制造商：	PHILIPS SEMICONDUCTORS
包装说明：	TSSOP, TSSOP5/6,.08
Reach Compliance Code：	unknown
风险等级：	5.68
JESD-30 代码：	R-PDSO-G5
JESD-609代码：	e3
负载电容（CL）：	50 pF
逻辑集成电路类型：	INVERTER
最大I（ol）：	0.002 A
湿度敏感等级：	1
端子数量：	5
最高工作温度：	125 °C
最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY
封装代码：	TSSOP
封装等效代码：	TSSOP5/6,.08
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
电源：	5 V
Prop。Delay @ Nom-Sup：	27 ns
认证状态：	Not Qualified
施密特触发器：	NO
子类别：	Gates
标称供电电压 (Vsup)：	5 V
表面贴装：	YES
技术：	CMOS
温度等级：	AUTOMOTIVE
端子面层：	Matte Tin (Sn)
端子形式：	GULL WING
端子节距：	0.635 mm
端子位置：	DUAL
Base Number Matches：	1

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