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产品型号74LVC1G34GW的概述

芯片74LVC1G34GW的概述 74LVC1G34GW是一款领先的逻辑电路芯片，属于74LVC系列。这款单个输入和输出的非反相缓冲器能够提供高达5V的逻辑输入电压，并兼容多种逻辑电平，适用于TTL及CMOS电路。这款芯片因其低功耗、高速和优异的电气特性，已广泛应用于多种电子产品中，如汽车电子、消费电子和工业控制系统等。 74LVC1G34GW采用的是单通道配置，输入可以是1位信号，输出信号与输入保持一致，其电路设计使得在处理不同电平时，输出信号即可进行稳定转换，因而在大多数应用场景中呈现出很好的兼容性和灵活性。此外，74LVC1G34GW支持三态输出控制，允许在多个设备连接时实现有效的数据交换，增强了系统的可扩展性。芯片74LVC1G34GW的详细参数 - 逻辑功能: 非反相缓冲器 - 工作电压范围: 1.65V至5.5V - 输入电压范围: 0V至5.5V - 工作温度范围: -...

产品型号74LVC1G34GW的Datasheet PDF文件预览

74LVC1G34

Single buffer

Rev. 02 — 21 May 2007

Product data sheet

1. General description

The 74LVC1G34 provides a low-power, low-voltage single buffer.

The input can be driven from either 3.3 V or 5 V devices. This feature allows the use of

this device in a mixed 3.3 V and 5 V environment.

This device is fully speciﬁed for partial power-down applications using I_OFF. The I_OFF

circuitry disables the output, preventing the damaging backﬂow current through the device

when it is powered down.

Schmitt trigger action at all inputs makes the circuit highly tolerant of slower input rise and

fall times.

2. Features

■ Wide supply voltage range from 1.65 V to 5.5 V

■ 5 V tolerant inputs for interfacing with 5 V logic

■ High noise immunity

■ Complies with JEDEC standard:

◆ JESD8-7 (1.65 V to 1.95 V)

◆ JESD8-5 (2.3 V to 2.7 V)

◆ JESD8-B/JESD36 (2.7 V to 3.6 V).

■ ±24 mA output drive (V_CC= 3.0 V)

■ ESD protection:

◆ HBM JESD22-A114E exceeds 2000 V

◆ MM JESD22-A115-A exceeds 200 V

■ CMOS low power consumption

■ Latch-up performance exceeds 250 mA

■ Direct interface with TTL levels

■ Multiple package options

■ Speciﬁed from −40 °C to +85 °C and −40 °C to +125 °C

74LVC1G34

NXP Semiconductors

Single buffer

3. Ordering information

Table 1.

Ordering information

Type number

Package

Temperature range Name

Description

Version

74LVC1G34GW

−40 °C to +125 °C

TSSOP5

plastic thin shrink small outline package; 5 leads;

body width 1.25 mm

SOT353-1

74LVC1G34GV

74LVC1G34GM

−40 °C to +125 °C

SC-74A

XSON6

plastic surface-mounted package; 5 leads

SOT753

plastic extremely thin small outline package; no leads; SOT886

6 terminals; body 1 × 1.45 × 0.5 mm

74LVC1G34GF

−40 °C to +125 °C

XSON6

plastic extremely thin small outline package; no leads; SOT891

6 terminals; body 1 × 1 × 0.5 mm

4. Marking

Table 2.

Marking

Type number

74LVC1G34GW

74LVC1G34GV

74LVC1G34GM

74LVC1G34GF

Marking code

5. Functional diagram

001aac538

001aac537

001aac536

Fig 1. Logic symbol

Fig 2. IEC logic symbol

Fig 3. Logic diagram

74LVC1G34_2

Product data sheet

Rev. 02 — 21 May 2007

2 of 15

74LVC1G34

NXP Semiconductors

Single buffer

6. Pinning information

6.1 Pinning

74LVC1G34

n.c.

74LVC1G34

n.c.

GND

001aag504

001aag505

Transparent top view

001aag503

Fig 4. Pin conﬁguration SOT353-1

and SOT753

Fig 5. Pin conﬁguration SOT886

Fig 6. Pin conﬁguration SOT891

6.2 Pin description

Table 3.

Symbol

Pin description

Description

SOT353-1/SOT753

SOT886/SOT891

n.c.

not connected

data input

GND

ground (0 V)

data output

n.c.

V_CC

not connected

supply voltage

7. Functional description

Table 4.

Function table^[1]

Input

Output

[1] H = HIGH voltage level;

L = LOW voltage level.

74LVC1G34_2

Product data sheet

Rev. 02 — 21 May 2007

3 of 15

74LVC1G34

NXP Semiconductors

Single buffer

8. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).

Symbol

V_CC

I_IK

Parameter

Conditions

Min

−0.5

−50

−0.5

Max

+6.5

Unit

supply voltage

input clamping current

input voltage

V_I< 0 V

[1]

V_I

+6.5

±50

V_CC+ 0.5

+6.5

±50

100

I_OK

output clamping current

output voltage

V_O> V_CCor V_O< 0 V

Active mode

[1][2]

V_O

−0.5

Power-down mode

V_O= 0 V to V_CC

I_O

output current

°C

I_CC

I_GND

P_tot

T_stg

supply current

ground current

−100

[3]

total power dissipation

storage temperature

T_amb= −40 °C to +125 °C

250

+150

−65

[1] The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.

[2] When V_CC= 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.

[3] For TSSOP5 and SC-74A packages: above 87.5 °C the value of P_totderates linearly with 4.0 mW/K.

For XSON6 packages: above 45 °C the value of P_totderates linearly with 2.4 mW/K.

9. Recommended operating conditions

Table 6.

Symbol

V_CC

Recommended operating conditions

Parameter

Conditions

Min

Typ

Max

5.5

Unit

supply voltage

input voltage

output voltage

1.65

V_I

5.5

V_O

Active mode

V_CC

5.5

V_O

°C

V_CC= 0 V; Power-down mode

T_amb

ambient temperature

−40

+125

∆t/∆V

input transition rise and fall rate V_CC= 1.65 V to 2.7 V

V_CC= 2.7 V to 5.5 V

ns/V

74LVC1G34_2

Product data sheet

Rev. 02 — 21 May 2007

4 of 15

74LVC1G34

NXP Semiconductors

Single buffer

10. Static characteristics

Table 7.

Static characteristics

At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).

Symbol Parameter

Conditions

Min

Typ

Max

Unit

T_amb= −40 °C to +85 °C^[1]

V_IH

HIGH-level input voltage

V_CC= 1.65 V to 1.95 V

V_CC= 2.3 V to 2.7 V

V_CC= 2.7 V to 3.6 V

V_CC= 4.5 V to 5.5 V

V_CC= 1.65 V to 1.95 V

V_CC= 2.3 V to 2.7 V

V_CC= 2.7 V to 3.6 V

V_CC= 4.5 V to 5.5 V

0.65 × V_CC

1.7

2.0

0.7 × V_CC

V_IL

LOW-level input voltage

0.35 × V_CC

0.7

0.8

0.3 × V_CC

V_OH

HIGH-level output voltage V_I= V_IHor V_IL

I_O= −100 µA; V_CC= 1.65 V to 5.5 V

_CC− 0.1

I_O= −4 mA; V_CC= 1.65 V

I_O= −8 mA; V_CC= 2.3 V

I_O= −12 mA; V_CC= 2.7 V

I_O= −24 mA; V_CC= 3.0 V

I_O= −32 mA; V_CC= 4.5 V

V_I= V_IHor V_IL

1.2

1.9

2.2

2.3

3.8

1.54

2.15

2.50

2.62

4.11

V_OL

LOW-level output voltage

I_O= 100 µA; V_CC= 1.65 V to 5.5 V

I_O= 4 mA; V_CC= 1.65 V

I_O= 8 mA; V_CC= 2.3 V

0.10

0.45

0.30

0.40

0.55

±5

0.07

0.12

0.17

0.33

0.39

±0.1

0.1

I_O= 12 mA; V_CC= 2.7 V

I_O= 24 mA; V_CC= 3.0 V

I_O= 32 mA; V_CC= 4.5 V

V_CC= 0 V to 5.5 V; V_I= 5.5 V or GND

[2]

I_I

input leakage current

µA

I_OFF

I_CC

power-off leakage current V_CC= 0 V; V_Ior V_O= 5.5 V

±10

supply current

V_CC= 1.65 V to 5.5 V; I_O= 0 A;

V_I= 5.5 V or GND

∆I_CC

additional supply current

input capacitance

V_CC= 2.3 V to 5.5 V; V_I= V_CC− 0.6 V;

I_O= 0 A

500

µA

C_I

V_CC= 3.3 V; V_I= GND to V_CC

T_amb= −40 °C to +125 °C

V_IH

HIGH-level input voltage

V_CC= 1.65 V to 1.95 V

V_CC= 2.3 V to 2.7 V

V_CC= 2.7 V to 3.6 V

V_CC= 4.5 V to 5.5 V

V_CC= 1.65 V to 1.95 V

V_CC= 2.3 V to 2.7 V

V_CC= 2.7 V to 3.6 V

V_CC= 4.5 V to 5.5 V

0.65 × V_CC

1.7

2.0

0.7 × V_CC

V_IL

LOW-level input voltage

0.35 × V_CC

0.7

0.8

0.3 × V_CC

74LVC1G34_2

Product data sheet

Rev. 02 — 21 May 2007

5 of 15

74LVC1G34

NXP Semiconductors

Single buffer

Table 7.

Static characteristics …continued

At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).

Symbol Parameter

V_OHHIGH-level output voltage V_I= V_IHor V_IL

I_O= −100 µA; V_CC= 1.65 V to 5.5 V

Conditions

Min

Typ

Max

Unit

V_CC− 0.1

I_O= −4 mA; V_CC= 1.65 V

I_O= −8 mA; V_CC= 2.3 V

I_O= −12 mA; V_CC= 2.7 V

I_O= −24 mA; V_CC= 3.0 V

I_O= −32 mA; V_CC= 4.5 V

V_I= V_IHor V_IL

0.95

1.7

1.9

2.0

3.4

V_OL

LOW-level output voltage

I_O= 100 µA; V_CC= 1.65 V to 5.5 V

I_O= 4 mA; V_CC= 1.65 V

I_O= 8 mA; V_CC= 2.3 V

0.10

0.70

0.45

0.60

0.80

±100

±200

200

I_O= 12 mA; V_CC= 2.7 V

I_O= 24 mA; V_CC= 3.0 V

I_O= 32 mA; V_CC= 4.5 V

V_CC= 0 V to 5.5 V; V_I= 5.5 V or GND

I_I

input leakage current

µA

I_OFF

I_CC

power-off leakage current V_CC= 0 V; V_Ior V_O= 5.5 V

supply current

V_CC= 1.65 V to 5.5 V; I_O= 0 A;

V_I= 5.5 V or GND

∆I_CC

additional supply current

V_CC= 2.3 V to 5.5 V; V_I= V_CC− 0.6 V;

5000

µA

I_O= 0 A

[1] All typical values are measured at T_amb= 25 °C.

[2] These typical values are measured at V_CC= 3.3 V.

74LVC1G34_2

Product data sheet

Rev. 02 — 21 May 2007

6 of 15

74LVC1G34

NXP Semiconductors

Single buffer

11. Dynamic characteristics

Table 8.

Dynamic characteristics

Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 8.

Symbol Parameter Conditions −40 °C to +85 °C

−40 °C to +125 °C Unit

Min

Typ^[1]

Max

Min

Max

[2]

t_pd

propagation delay A to Y; see Figure 7

V_CC= 1.65 V to 1.95 V

V_CC= 2.3 V to 2.7 V

1.0

0.5

4.0

2.6

2.3

2.0

1.6

8.6

4.4

4.5

4.1

3.2

1.0

0.5

11.0

5.6

5.2

4.1

V_CC= 2.7 V

V_CC= 3.0 V to 3.6 V

V_CC= 4.5 V to 5.5 V

[3]

C_PD

power dissipation V_I= GND to V_CC; V_CC= 3.3 V

capacitance

[1] Typical values are measured at T_amb= 25 °C and V_CC= 1.8 V, 2.5 V, 2.7 V, 3.3 V, and 5.0 V respectively.

[2] t_pdis the same as t_PLHand t_PHL

[3] C_PDis used to determine the dynamic power dissipation (P_Din µW).

P_D= C_PD× V_CC²× f_i× N + ∑(C_L× V_CC²× f_o) where:

f_i= input frequency in MHz;

f_o= output frequency in MHz;

C_L= output load capacitance in pF;

V_CC= supply voltage in V;

N = number of inputs switching;

∑(C_L× V_CC²× f_o) = sum of outputs.

12. Waveforms

A input

GND

PHL

PLH

Y output

mnb153

Measurement points are given in Table 9.

V_OLand V_OHare typical output voltage drops that occur with the output load.

Fig 7. The data input (A) to output (Y) propagation delays

74LVC1G34_2

Product data sheet

Rev. 02 — 21 May 2007

7 of 15

74LVC1G34

NXP Semiconductors

Single buffer

Table 9.

Measurement points

Supply voltage

V_CC

Input

Output

V_M

1.65 V to 1.95 V

2.3 V to 2.7 V

2.7 V

0.5 × V_CC

1.5 V

0.5 × V_CC

1.5 V

3.0 V to 3.6 V

4.5 V to 5.5 V

1.5 V

0.5 × V_CC

EXT

PULSE

GENERATOR

DUT

mna616

Test data is given in Table 10.

Deﬁnitions for test circuit:

R_L= Load resistance.

C_L= Load capacitance including jig and probe capacitance.

R_T= Termination resistance should be equal to the output impedance Z_oof the pulse generator.

V_EXT= External voltage for measuring switching times.

Fig 8. Load circuitry for switching times

Table 10. Test data

Supply voltage

V_CC

Input

V_I

Load

C_L

V_EXT

t_r= t_f

R_L

t_PLH, t_PHL

open

1.65 V to 1.95 V

2.3 V to 2.7 V

2.7 V

V_CC

2.7 V

V_CC

≤ 2.0 ns

≤ 2.5 ns

30 pF

50 pF

1 kΩ

500 Ω

open

3.0 V to 3.6 V

4.5 V to 5.5 V

open

74LVC1G34_2

Product data sheet

Rev. 02 — 21 May 2007

8 of 15

74LVC1G34

NXP Semiconductors

Single buffer

13. Package outline

TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm

SOT353-1

(A )

w M

detail X

1.5

3 mm

scale

DIMENSIONS (mm are the original dimensions)

(1)

UNIT

max.

0.1

1.0

0.8

0.30

0.15

0.25

0.08

2.25

1.85

1.35

1.15

2.25

2.0

0.46

0.21

0.60

0.15

7°

0°

1.1

0.65

1.3

0.15

0.425

0.3

0.1

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

REFERENCES

OUTLINE

EUROPEAN

PROJECTION

ISSUE DATE

VERSION

IEC

JEDEC

JEITA

00-09-01

03-02-19

SOT353-1

MO-203

SC-88A

Fig 9. Package outline SOT353-1 (TSSOP5)

74LVC1G34_2

Product data sheet

Rev. 02 — 21 May 2007

9 of 15

74LVC1G34

NXP Semiconductors

Single buffer

Plastic surface-mounted package; 5 leads

SOT753

detail X

M B

2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

0.100

0.013

0.40

0.25

1.1

0.9

0.26

0.10

3.1

2.7

1.7

1.3

3.0

2.5

0.6

0.2

0.33

0.23

0.95

0.2

0.1

REFERENCES

JEDEC JEITA

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

02-04-16

06-03-16

SOT753

SC-74A

Fig 10. Package outline SOT753 (SC-74A)

74LVC1G34_2

Product data sheet

Rev. 02 — 21 May 2007

10 of 15

74LVC1G34

NXP Semiconductors

Single buffer

XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm

SOT886

4×

(2)

6×

(2)

terminal 1

index area

2 mm

scale

DIMENSIONS (mm are the original dimensions)

(1)

UNIT

max max

0.25

0.17

1.5

1.4

1.05

0.95

0.35 0.40

0.27 0.32

0.5 0.04

0.6

0.5

Notes

1. Including plating thickness.

2. Can be visible in some manufacturing processes.

REFERENCES

JEDEC JEITA

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC

04-07-15

04-07-22

SOT886

MO-252

Fig 11. Package outline SOT886 (XSON6)

74LVC1G34_2

Product data sheet

Rev. 02 — 21 May 2007

11 of 15

74LVC1G34

NXP Semiconductors

Single buffer

XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1 x 0.5 mm

SOT891

4×

(1)

6×

(1)

terminal 1

index area

2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

max max

0.20 1.05 1.05

0.12 0.95 0.95

0.35 0.40

0.27 0.32

0.5 0.04

0.55 0.35

Note

1. Can be visible in some manufacturing processes.

REFERENCES

JEDEC JEITA

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC

05-04-06

07-05-15

SOT891

Fig 12. Package outline SOT891 (XSON6)

74LVC1G34_2

Product data sheet

Rev. 02 — 21 May 2007

12 of 15

74LVC1G34

NXP Semiconductors

Single buffer

14. Abbreviations

Table 11. Abbreviations

Acronym

CMOS

DUT

Description

Complementary Metal Oxide Semiconductor

Device Under Test

ESD

ElectroStatic Discharge

Human Body Model

HBM

Machine Model

TTL

Transistor-Transistor Logic

15. Revision history

Table 12. Revision history

Document ID

74LVC1G34_2

Modiﬁcations:

Release date

20070521

Data sheet status

Change notice

Supersedes

Product data sheet

74LVC1G34_1

• The format of this data sheet has been redesigned to comply with the new identity guidelines

of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

• Added type number 74LVC1G34GF (XSON6/SOT891 package)

• Section 10 “Static characteristics”:

Changed: Conditions for input leakage and supply current.

74LVC1G34_1

20051107

Product data sheet

74LVC1G34_2

Product data sheet

Rev. 02 — 21 May 2007

13 of 15

74LVC1G34

NXP Semiconductors

Single buffer

16. Legal information

16.1 Data sheet status

Document status^[1][2]

Product status^[3]

Development

Deﬁnition

Objective [short] data sheet

This document contains data from the objective speciﬁcation for product development.

This document contains data from the preliminary speciﬁcation.

This document contains the product speciﬁcation.

Preliminary [short] data sheet Qualiﬁcation

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term ‘short data sheet’ is explained in section “Deﬁnitions”.

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

malfunction of a NXP Semiconductors product can reasonably be expected to

16.2 Deﬁnitions

result in personal injury, death or severe property or environmental damage.

NXP Semiconductors accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or applications and therefore

such inclusion and/or use is at the customer’s own risk.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

16.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

16.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

17. Contact information

For additional information, please visit: http://www.nxp.com

For sales ofﬁce addresses, send an email to: salesaddresses@nxp.com

74LVC1G34_2

Product data sheet

Rev. 02 — 21 May 2007

14 of 15

74LVC1G34

NXP Semiconductors

Single buffer

18. Contents

General description . . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Ordering information. . . . . . . . . . . . . . . . . . . . . 2

Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2

6.1

6.2

Pinning information. . . . . . . . . . . . . . . . . . . . . . 3

Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3

Functional description . . . . . . . . . . . . . . . . . . . 3

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4

Recommended operating conditions. . . . . . . . 4

Static characteristics. . . . . . . . . . . . . . . . . . . . . 5

Dynamic characteristics . . . . . . . . . . . . . . . . . . 7

Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13

Legal information. . . . . . . . . . . . . . . . . . . . . . . 14

Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14

Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

16.1

16.2

16.3

16.4

Contact information. . . . . . . . . . . . . . . . . . . . . 14

Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 21 May 2007

Document identifier: 74LVC1G34_2

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74LVC1G34GW产品参数

型号:	74LVC1G34GW
是否Rohs认证：	符合
生命周期：	Active
包装说明：	TSSOP,
Reach Compliance Code：	compliant
HTS代码：	8542.39.00.01
风险等级：	5.4
系列：	LVC/LCX/Z
JESD-30 代码：	R-PDSO-G5
JESD-609代码：	e3
长度：	2.05 mm
逻辑集成电路类型：	BUFFER
湿度敏感等级：	1
功能数量：	1
输入次数：	1
端子数量：	5
最高工作温度：	125 °C
最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY
封装代码：	TSSOP
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度（摄氏度）：	260
传播延迟（tpd）：	11 ns
认证状态：	Not Qualified
座面最大高度：	1.1 mm
最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	1.65 V
标称供电电压 (Vsup)：	3.3 V
表面贴装：	YES
技术：	CMOS
温度等级：	AUTOMOTIVE
端子面层：	Tin (Sn)
端子形式：	GULL WING
端子节距：	0.65 mm
端子位置：	DUAL
处于峰值回流温度下的最长时间：	30
宽度：	1.25 mm
Base Number Matches：	1

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