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产品型号8050PLT1的Datasheet PDF文件预览

8050PLT1

8050QLT1

NPN General Purpose Transistors

PRIMARY CHARACTERISTICS

SOT-23

PACKAGE

P_D

V_CEO

I_C

225mW

25V

Marking Code : 80P/1YC

Ex : 8050PLT1

800mA

100~300

150℃

COLLECTOR

h_FE

80P

T_J,Max

BASE

EMITTER

FEATURES

MECHANICAL DATA

Case：Molded plastic,SOT-23

Polarity：Shown above



High current capacity in compact

package.

IC = 0.8A.

Terminals :Plated terminals,



Epitaxial planar type.

Moisture Sensitivity Level 1

solderable per MIL-STD-750,Method

2026



Epoxy : UL94-V0 rated flame

retardant

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

V_CEO

V_CBO

V_EBO

Collector Current-continuoun

800

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board,(1)

=25°C

225

1.8

Derate above 25°C

mW/°C

Thermal Resistance,Junction to Ambient

Rθ^{J A}

556

°C/W

Total Device Dissipation

Alumina Substrate,(2) TA=25°C

Derate above 25°C

300

2.4

mW/°C

Thermal Resistance,Junction to Ambient

Junction and Storage Temperature

Rθ^{J A}

417

°C/W

°C

-55 to +150

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

2015.09

www.willas.com.tw

Rev.L02

8050PLT1

8050QLT1

NPN General Purpose Transistors

ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(I_C=1.0mA)

–

V_(BR)CEO

V_(BR)EBO

V_(BR)CBO

Emitter-Base Breakdown Voltage

(I_E=100µΑ)

Collector-Base Breakdown Voltage

(I_C=100µΑ)

Collector Cutoff Current (V_CB=35V)

Emitter Cutoff Current (V_EB=4V)

ELECTRICAL CHARACTERISTICS (T

I_CBO

I_EBO

–

150

=25°C unless otherwise noted)

Charateristic

Symbol

Min

100

Typ

Max

Unit

DC Current Gain

I_C=100mA,V_CE=1V

h_FE

300

Collector-Emitter Saturation Voltage

(I_C=800mA, I_B=80mA)

V_CE(sat)

0.5

Classification of h_FE

Rank

80P

Marking

Range

1YC

100~200

150~300

2015.09

www.willas.com.tw

Rev.L02

8050PLT1

8050QLT1

NPN General Purpose Transistors

FIG.1 - Current Gain & Collector Current

FIG.2 - Saturation Voltage & Collector Current

1000

=1V

100

0.1

CE(sat)

@ I =10I

0.01

0.001

0.01

0.1

100

1000

0.01

0.1

100

1000

Collector Current (mA)

FIG.3 - On Voltage & Collector Current

FIG.4 - Cutoff Frequency & Collector Current

1000

100

VCE=10V

BE(ON)

@ V =1V

0.1

0.01

0.1

100

1000

100

1000

Collector Current (mA)

FIG.5 - Capacitance & Reverse-Biased Voltage

100

Cob

0.1

100

Reverse-Biased Voltage (V)

2015.09

www.willas.com.tw

Rev.L02

8050PLT1

8050QLT1

NPN General Purpose Transistors

Outline Drawing

SOT-23

.122(3.10)

.106(2.70)

.008(0.20)

.003(0.08)

.95 TYP

.080(2.04)

.070(1.78)

.004(0.10)MAX.

.020(0.50)

.012(0.30)

Dimensions in inches and (millimeters)

Rev.E

2015.09

www.willas.com.tw

Rev.L02

8050PLT1

8050QLT1

NPN General Purpose Transistors

SOT-23

Suggested Soldering Pad Layout

0.0355

(0.90)

0.0435

(1.10)

0.0315

(0.80)

Dimensions in inches and (millimeters)

Rev.A

2015.09

www.willas.com.tw

Rev.L02

8050PLT1

8050QLT1

NPN General Purpose Transistors

Reel Taping Sepecification - Surface Mount Device/SOT-23

Reel Packing

PER

CARTION

GROSS

WEIGHT

PER REEL REEL DIA BOX SIZE

PER BOX

CARTION

(m/m)

PACKAGE

SOT-23

(m/m)

178

(m/m)

(Kg)

15.0

3,000

192*195*136

30,000

440*410*410 360,000

Direction tape is pulled

ITEM

SYMBOL

SPECIFICATIONS (mm)

SPECIFICATIONS (inch)

Carrier width

3.1 0.1

0.122 0.004

Carrier length

Carrier depth

Sprocket hole

2.85 0.1

0.112 0.004

0.055 0.004

1.40 0.1

1.5 + 0.1/-0

180 + 0/-3

60 + 1/-0

0.059 + 0.004/-0

7.083 + 0/-0.118

2.361 + 0.039/-0

Reel outside diameter

Reel inner diameter

Feed hole diameter

Sprocket hole position

Punch hole position

Punch hole pitch

Sprocket hole pitch

Embossment center

Tape width

13 0.2

0.512 0.008

1.75 0.1

0.069 0.004

3.5 0.05

0.138 0.002

4.0 0.1

0.157 0.004

4.0 0.1

0.157 0.004

2.0 0.05

0.079 0.002

8.0 0.2

0.315 0.008

Reel width

9.0 0.3

0.354 0.012

NOTE: 1.Devices are packed in accordance with EIAJ stand ETX-7001 and specifications listed above.

2.Available on 7 inch ( 3,000 c.t. ) or 13 inch ( 10,000 c.t. ) diameter reels.

2015.09

www.willas.com.tw

Rev.L02

8050PLT1

8050QLT1

NPN General Purpose Transistors

Ordering Information:

Device PN

8050

Packing

Tape&Reel: 3 Kpcs/Reel

x ⁽¹⁾LT1G^{(2 )}‐WS

Note:

(1) X : Classification of hFE

(2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H”

***Disclaimer***

WILLAS reserves the right to make changes without notice to any product

specification herein, to make corrections, modifications, enhancements or other

changes. WILLAS or anyone on its behalf assumes no responsibility or liability

for any errors or inaccuracies. Data sheet specifications and its information

contained are intended to provide a product description only. "Typical" parameters

which may be included on WILLAS data sheets and/ or specifications can

and do vary in different applications and actual performance may vary over time.

WILLAS does not assume any liability arising out of the application or

use of any product or circuit.

This is the preliminary specification. WILLAS products are not designed, intended or

authorized for use in medical, life-saving implant or other applications intended for

life-sustaining or other related applications where a failure or malfunction of component

or circuitry may directly or indirectly cause injury or threaten a life without expressed

written approval of WILLAS. Customers using or selling WILLAS components for use in

such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc

and its subsidiaries harmless against all claims, damages and expenditures.

2015.09

www.willas.com.tw

Rev.L02

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