80N08供应商报价哪里找芯片批发报价原理和应用中文资料-中国IC网-芯三七

产品型号80N08的Datasheet PDF文件预览

UNISONIC TECHNOLOGIES CO., LTD

80N08

Preliminary

Power MOSFET

N-CHANNEL 80V (D-S) MOSFET

DESCRIPTION

The UTC 80N08 is an N-channel MOSFET using UTC trench

technology. It can be used in applications, such as power supply

(secondary synchronous rectification), industrial and primary switch

etc.

FEATURES

* Trench FET Power MOSFETS Technology

* 100 % R_Gand UIS Tested

SYMBOL

D (2)

G (1)

S (3)

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

TO-220

Packing

Tube

Lead Free

Halogen Free

80N08G-TA3-R

1

2

3

80N08L-TA3-R

G

D

S

Note: G: GND, D: Drain, S: Source

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80N08

Preliminary

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (T_J= 25 °C, unless otherwise specified)

PARAMETER

SYMBOL

I_D

TEST CONDITIONS

T_C=25 °C, V_GS=10 V

T_C=100 °C, V_GS=10 V (Note 2)

RATINGS

80

UNIT

A

Continuous Drain Current (Note 1)

80

Pulsed Drain Current (Note 2)

Avalanche Energy, Single Pulse (Note 2)

Gate Source Voltage (Note 3)

Power Dissipation

I_D,_pulseT_C=25 °C

320

A

mJ

V

E_AS

V_GS

P_TOT

T_J

I_D=80A

810

±20

T_C=25 °C

300

W

°C

Junction Temperature

+150

-55 ~ +150

Storage Temperature

T_STG

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

θ_JA

RATINGS

UNIT

Junction to Ambient

Junction to Case

62

K/W

θ_JC

0.5

ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BV_DSS

I_DSS

I_D=1mA, V_GS=0V

80

V

V_DS=75V, V_GS=0V, T_J=25°C

V_DS=75V, V_GS=0V, T_J=125°C ²

V_DS=0V, V_GS=20V

0.01

1

Drain-Source Leakage Current

µA

nA

100

Gate-Source Leakage Current

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-State Resistance

DYNAMIC PARAMETERS (Note 2)

Input Capacitance

I_GSS

1

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=250µA

V_GS=10V, I_D=80A

2.1

3.0

4.0

12

V

mΩ

C_ISS

C_OSS

C_RSS

4700

1260

580

pF

V_GS=0V, V_DS=25V, f=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING PARAMETERS (Note 2)

Gate to Source Charge

Gate to Drain Charge

Q_GS

Q_GD

Q_G

25

69

37

nC

V

V_DD=60V, V_GS=0~10V, I_D=80A

116

180

Total Gate Charge

144

5.4

26

Gate Plateau Voltage

V_plateau

t_D(ON)

t_R

Turn-ON Delay Time

ns

Rise Time

V_DD=40V, R_G=2.2Ω

I_D=80A, V_GS=10V

50

Turn-OFF Delay Time

Fall-Time

t_D(OFF)

t_F

61

30

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Pulsed Current

I_S

I_{S, pulse}

V_SD

80

T_C=25°C (Note 2)

A

320

1.3

I_F=80A, V_GS=0V, T_J=25°C

I_F= I_S, dI_F/dt=100A/µs

V_R=40V

0.9

110

470

V

Drain-Source Diode Forward Voltage (Note1)

Reverse Recovery Time (Note 2)

Reverse Recovery Charge (Note 2)

t_RR

140

590

ns

nC

Q_RR

Note: 1. Current is limited by bondwire; with an θ_JC= 0.5K/W the chip is able to carry 132A at 25°C.

2. Defined by design. Not subject to production test.

3. Qualified at -20V and +20V.

UNISONIC TECHNOLOGIES CO., LTD

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80N08

Preliminary

Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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80N08相关产品..

80N085 80N08G 80N08G-TA3-R 80N08G-TA3-T 80n08l 80N08L-TA3-T 80N08S2L-07 80N08TR 80N10 80N107 80N10L 80N10T 80N15 80N20 80N20-40 80N20M5 80N30 80N30W 80N3LLH6 80N4F6 80N50 80N55 80N60 80N60B3D 80N6F6 80n70 80N70F4 80N70F6 80N75 80N75F6 80N80 80NC 80NE03L06 80NE06 80NE06-10 80NF03 80NF03L 80NF03L-04 80NF03L04

型号:	80N08G-TA3-R
是否Rohs认证：	符合
生命周期：	Active
零件包装代码：	TO-220AB
包装说明：	FLANGE MOUNT, R-PSFM-T3
针数：	3
Reach Compliance Code：	compliant
ECCN代码：	EAR99
风险等级：	5.65
雪崩能效等级（Eas）：	810 mJ
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	80 V
最大漏极电流 (ID)：	80 A
最大漏源导通电阻：	0.012 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3
元件数量：	1
端子数量：	3
工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	320 A
认证状态：	Not Qualified
表面贴装：	NO
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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