80N08
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
300
250
200
150
100
250
200
150
100
50
0
50
0
0
20
40
60
80 100 120
0
0.5
Gate Threshold Voltage, VTH (V)
1
1.5
2
2.5
3
Drain-Source Breakdown Voltage, BVDSS (V)
Drain-Source On-State Resistance
Drain Current vs. Source to Drain Voltage
12
Characteristics
20
18
16
14
10
8
12
10
6
VGS=10V, ID=20A
8
4
2
0
6
4
2
0
0
50
100 150 200 250 300
0.2
0.4
0.6
0.8
1.0
0
Drain to Source Voltage, VDS (mV)
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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