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产品型号81RIA120的Datasheet PDF文件预览

Bulletin I25201 rev. B 03/03  
80RIA SERIES  
PHASE CONTROL THYRISTORS  
Stud Version  
Features  
Hermetic glass-metal seal  
80A  
International standard case TO-209AC (TO-94)  
Typical Applications  
DC motor controls  
Controlled DC power supplies  
AC controllers  
Major Ratings and Characteristics  
Parameters  
IT(AV)  
80RIA  
80  
Unit  
A
@ TC  
85  
°C  
IT(RMS)  
ITSM  
125  
1900  
1990  
18  
A
@ 50Hz  
@ 60Hz  
@ 50Hz  
@ 60Hz  
A
A
I2t  
KA2s  
KA2s  
16  
VDRM/VRRM  
400 to 1200  
110  
V
case style  
t
typical  
µs  
q
TO-209AC (TO-94)  
TJ  
- 40 to 125  
°C  
1
www.irf.com  
80RIA Series  
Bulletin I25201 rev. B 03/03  
ELECTRICALSPECIFICATIONS  
Voltage Ratings  
Voltage  
VDRM/VRRM, max. repetitive  
VRSM , maximum non-  
IDRM/IRRM max.  
@ TJ = 125°C  
mA  
Type number Code  
peak and off-state voltage  
repetitive peak voltage  
V
V
40  
400  
500  
80RIA  
80  
800  
900  
15  
120  
1200  
1300  
On-state Conduction  
Parameter  
80RIA  
Units Conditions  
IT(AV) Max. average on-state current  
@ Case temperature  
80  
85  
A
180° conduction, half sine wave  
°C  
IT(RMS) Max. RMS on-state current  
125  
1900  
1990  
1600  
1675  
18  
A
DC @ 75°C case temperature  
ITSM  
Max. peak, one-cycle  
t = 10ms  
t = 8.3ms  
t = 10ms  
t = 8.3ms  
t = 10ms  
t = 8.3ms  
t = 10ms  
t = 8.3ms  
No voltage  
reapplied  
non-repetitive surge current  
A
100% VRRM  
reapplied  
Sinusoidal half wave,  
Initial TJ = TJ max.  
I2t  
Maximum I2t for fusing  
No voltage  
reapplied  
100% VRRM  
reapplied  
16  
KA2s  
12.7  
11.7  
180.5  
I2t  
Maximum I2t for fusing  
KA2s t = 0.1 to 10ms, no voltage reapplied  
VT(TO)1 Low level value of threshold  
voltage  
0.99  
1.13  
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.  
V
VT(TO) High level value of threshold  
2
(I > π x IT(AV)),TJ = TJ max.  
voltage  
rt1  
Low level value of on-state  
slope resistance  
2.29  
1.84  
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.  
mΩ  
rt2  
High level value of on-state  
slope resistance  
(I > π x IT(AV)),TJ = TJ max.  
VTM  
IH  
Max. on-state voltage  
Maximum holding current  
Typical latching current  
1.60  
200  
400  
V
I = 250A, TJ = 25°C t = 10ms sine pulse  
pk p  
mA  
TJ = 25°C, anode supply 12V resistive load  
IL  
2
www.irf.com  
80RIA Series  
Bulletin I25201 rev. B 03/03  
Switching  
Parameter  
80RIA  
300  
Units  
Conditions  
T = 125°C, V = rated VDRM, ITM = 2xdi/dt snubber  
di/dt  
Max. non-repetitive rate of rise  
of turned-on current  
d
J
A/µs 0.2µF, 15, Gate pulse: 20V, 65, t = 6µs, t = 0.5µs  
p
r
Per JEDEC Standard RS-397, 5.2.2.6.  
Gate pulse: 10V, 15source, t = 6µs, t = 0.1µs,  
p
r
t
Typical delay time  
Typical turn-off time  
1
d
V
= rated VDRM, I = 50Adc, TJ = 25°C.  
TM  
d
µs  
ITM = 50A, TJ = TJ max, di/dt = -5A/µs min., VR = 50V,  
t
110  
q
dv/dt = 20V/µs, Gate bias: 0V 25, t = 500µs  
p
Blocking  
Parameter  
80RIA  
500  
Units  
Conditions  
dv/dt Maximum critical rate of rise of  
off-state voltage  
V/µs TJ = 125°C exponential to 67% rated VDRM  
IRRM  
IDRM  
Max. peak reverse and off-state  
leakage current  
15  
mA  
TJ = 125°C rated VDRM/VRRM applied  
Triggering  
Parameter  
Maximum peak gate power  
PG(AV) Maximum average gate power  
IGM Max. peak positive gate current  
80RIA  
Units  
Conditions  
PGM  
12  
3
TJ = TJ max, t 5ms  
p
W
A
TJ = TJ max, f = 50Hz, d% = 50  
3
TJ = TJ max, t 5ms  
p
+VGM Maximum peak positive  
gate voltage  
20  
10  
V
TJ = TJ max, t 5ms  
p
-VGM Maximum peak negative  
gate voltage  
IGT  
Max. DC gate current required  
to trigger  
270  
120  
60  
TJ = - 40°C  
TJ = 25°C  
mA  
V
Max. required gate trigger/ cur-  
TJ = 125°C  
TJ = - 40°C  
TJ = 25°C  
TJ = 125°C  
rent/ voltage are the lowest value  
which will trigger all units 6V an-  
ode-to-cathode applied  
VGT  
Max. DC gate voltage required  
to trigger  
3.5  
2.5  
1.5  
6
IGD  
DC gate current not to trigger  
DC gate voltage not to trigger  
mA  
V
Max. gate current/ voltage not to  
trigger is the max. value which  
will not trigger any unit with rated  
VDRM anode-to-cathode applied  
TJ = TJ max  
VGD  
0.25  
www.irf.com  
3
80RIA Series  
Bulletin I25201 rev. B 03/03  
Thermal and Mechanical Specification  
Parameter  
80RIA  
Units Conditions  
°C  
TJ  
T
Max.operatingtemperaturerange  
Max. storagetemperaturerange  
-40 to 125  
-40 to 150  
stg  
RthJC Max. thermalresistance,  
0.30  
0.1  
DC operation  
K/W  
junction to case  
RthCS Max. thermalresistance,  
Mounting surface, smooth, flat and greased  
case to heatsink  
T
Mountingtorque, ±10%  
15.5 (137)  
14 (120)  
130  
Non lubricated threads  
Lubricated threads  
Nm  
(lbf-in)  
wt  
Approximateweight  
Case style  
g
TO-209AC(TO-94)  
See Outline Table  
RthJ-C Conduction  
(The following table shows the increment of thermal resistence RthJ-C when devices operate at different conduction angles than DC)  
Conduction angle Sinusoidal conduction Rectangular conduction Units  
Conditions  
180°  
120°  
90°  
0.042  
0.050  
0.064  
0.095  
0.164  
0.030  
0.052  
0.070  
0.100  
0.165  
K/W  
TJ = TJ max.  
60°  
30°  
Ordering Information Table  
Device Code  
8
0
RIA 120  
1
2
3
4
1
2
-
-
ITAV x 10A  
0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)  
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)  
RIA = Essential part number  
3
4
5
-
-
-
Voltage code: Code x 10 = VRRM (See Voltage Rating Table)  
None = Stud base 1/2"-20UNF- 2A threads  
NOTE: For Metric Device M12 x 1.75 E6 Contact factory  
4
www.irf.com  
80RIA Series  
Bulletin I25201 rev. B 03/03  
Outline Table  
GLASS METAL SEAL  
16.5 (0.65) MAX.  
8.5 (0.3) DIA.  
.
2.5 (0.10) MAX.  
N
I
M
)
7
4.3 (0.17) DIA.  
3
.
0
(
5
.
9
FLEXIBLE LEAD  
2
C.S. 16mm  
(.025 s.i.)  
2
RED SILICON RUBBER  
RED CATHODE  
C.S. 0.4 mm  
(.0006 s.i.)  
Fast-on Terminals  
AMP. 280000-1  
REF-250  
WHITE GATE  
215 (8.46)  
10 (0.39)  
RED SHRINK  
WHITE SHRINK  
23.5 (0.92) MAX. DIA.  
SW 27  
1/2"-20UNF-2A *  
29.5 (1.16) MAX.  
Case Style TO-209AC (TO-94)  
All dimensions in millimeters (inches)  
* FOR METRIC DEVICE: M12 X 1.75 E6  
CONTACT FACTORY  
130  
120  
110  
100  
90  
130  
80RIA Series  
80RIA Series  
R
thJC  
(DC) = 0.30 K/W  
R
(DC) = 0.30 K/W  
thJC  
120  
110  
100  
90  
Conduction Period  
Conduction Angle  
30°  
60°  
90°  
30°  
120°  
60°  
90°  
180°  
80  
120°  
DC  
180°  
80  
70  
0
10 20 30 40 50 60 70 80 90  
Average On-state Current (A)  
0
20 40  
60 80 100 120 140  
Average On-state Current (A)  
Fig. 1 - Current Ratings Characteristics  
Fig. 2 - Current Ratings Characteristics  
www.irf.com  
5
80RIA Series  
Bulletin I25201 rev. B 03/03  
120  
180°  
120°  
90°  
60°  
30°  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
RM S Lim it  
2
3
K
/
W
W
Conduction Angle  
80RIA Series  
K
/
T = 125°C  
J
0
10 20 30 40 50 60 70  
Average On-state Current (A)  
8
0
25  
50  
75  
100  
125  
Maximum Allowable Ambient Temperature (°C)  
Fig. 3 - On-state Power Loss Characteristics  
180  
160  
140  
120  
100  
80  
DC  
180°  
120°  
90°  
60°  
30°  
R
=
0
.
4
K
/
W
-
D
e
l
t
a
R
RM S Lim it  
Conduction Period  
80RIA Series  
60  
40  
20  
T = 125°C  
J
0
0
20 40 60 80 100 120  
Average On-state Current (A)  
1
25  
50  
75  
100  
125  
Fig. 4 - On-state Power Loss Characteristics  
1800  
1600  
1400  
1200  
1000  
800  
2000  
Maximum Non Repetitive Surge Current  
VersusPulse Train Duration. Control  
Of Conduction May Not Be Maintained.  
At Any Rated Load Condition And With  
1900  
1800  
1700  
1600  
1500  
1400  
1300  
1200  
1100  
1000  
900  
Rated V  
Applied Following Surge.  
RRM  
Initial T = 125°C  
J
Initial T = 125°C  
@60 Hz 0.0083 s  
@50 Hz 0.0100 s  
J
No Voltage Reapplied  
Rated V  
Reapplied  
RRM  
80RIA Series  
80RIA Series  
800  
700  
1
10  
100  
0.01  
0.1  
Pulse Train Duration (s)  
1
Number Of Equal Amplitude Half Cycle Current Pulses(N)  
Fig. 5 - Maximum Non-Repetitive Surge Current  
Fig. 6 - Maximum Non-Repetitive Surge Current  
6
www.irf.com  
80RIA Series  
Bulletin I25201 rev. B 03/03  
10000  
1000  
100  
10  
T = 25°C  
J
T = 125°C  
J
80RIA Series  
1
0.5  
1
1.5  
InstantaneousOn-state Voltage (V)  
Fig. 7 - On-state Voltage Drop Characteristics  
2
2.5  
3
3.5  
4
4.5  
5
1
0.1  
Steady State Value  
= 0.30 K/W  
R
thJC  
(DC Operation)  
0.01  
0.001  
80RIA Series  
0.0001  
0.001  
0.01  
0.1  
1
10  
Square Wave Pulse Duration (s)  
Fig. 8 - Thermal Impedance ZthJC Characteristics  
100  
10  
1
Rectangular gate pulse  
(1) PGM = 100W, tp = 500µs  
(2) PGM = 50W, tp = 1ms  
(3) PGM = 20W, tp = 2.5ms  
(4) PGM = 10W, tp = 5ms  
a) Recommended load line for  
rated di/dt : 20V, 30ohms; tr<=0.5 µs  
b) Recommended load line for  
<=30%rated di/dt : 20V, 65ohms  
tr<=1 µs  
(1) (2)  
(4)  
(3)  
(a)  
(b)  
VGD  
Frequency Limited by PG(AV)  
10 100 1000  
IGD  
0.01  
Device: 80RIA Series  
0.1  
0.1  
0.001  
1
InstantaneousGate Current (A)  
Fig. 9 - Gate Characteristics  
www.irf.com  
7
80RIA Series  
Bulletin I25201 rev. B 03/03  
Data and specifications subject to change without notice.  
This product has been designed and qualified for Industrial Level.  
Qualification Standards can be found on IR's Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7309  
Visit us at www.irf.com for sales contact information. 03 /03  
8
www.irf.com  
This datasheet has been download from:  
www.datasheetcatalog.com  
Datasheets for electronics components.  
配单直通车
81RIA120产品参数
型号:81RIA120
是否Rohs认证: 不符合
生命周期:Transferred
零件包装代码:TO-94
包装说明:POST/STUD MOUNT, O-MUPM-H3
针数:4
Reach Compliance Code:compliant
HTS代码:8541.30.00.80
风险等级:5.19
Is Samacsys:N
标称电路换相断开时间:110 µs
配置:SINGLE
关态电压最小值的临界上升速率:500 V/us
最大直流栅极触发电流:120 mA
最大直流栅极触发电压:2.5 V
最大维持电流:150 mA
JEDEC-95代码:TO-209AC
JESD-30 代码:O-MUPM-H3
JESD-609代码:e0
最大漏电流:15 mA
通态非重复峰值电流:1700 A
元件数量:1
端子数量:3
最大通态电流:80000 A
最高工作温度:125 °C
最低工作温度:-40 °C
封装主体材料:METAL
封装形状:ROUND
封装形式:POST/STUD MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified
最大均方根通态电流:125 A
重复峰值关态漏电流最大值:15000 µA
断态重复峰值电压:1200 V
重复峰值反向电压:1200 V
子类别:Silicon Controlled Rectifiers
表面贴装:NO
端子面层:TIN LEAD
端子形式:HIGH CURRENT CABLE
端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCR
Base Number Matches:1
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