HM-65162
Absolute Maximum Ratings
Thermal Information
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Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7.0V
Input, Output or I/O Voltage . . . . . . . . . . . GND -0.3V to V +0.3V
Typical Derating Factor . . . . . . . . . . 05mA/MHz Increase in ICCOP
Thermal Resistance
CERDIP Package . . . . . . . . . . . . . . . .
CLCC Package . . . . . . . . . . . . . . . . . .
θ
( C/W)
θ
( C/W)
JA
JC
48
66
8
CC
12
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ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Maximum Storage Temperature Range . . . . . . . . .-65 C to +150 C
Maximum Junction Temperature. . . . . . . . . . . . . . . . . . . . . . +175 C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . +300 C
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Operating Conditions
Operating Voltage Range. . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range
Die Characteristics
HM-65162S-9, HM-65162B-9,
HM-65162-9, HM65162C-9. . . . . . . . . . . . . . . . . . -40 C to +85 C
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26000 Gates
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CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating
and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
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DC Electrical Specifications V = 5V ±10%; T = -40 C to +85 C (HM-65162S-9, HM-65162B-9, HM-65162-9, HM-65162C-9)
CC
A
LIMITS
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
ICCSB1
Standby Supply Current
-
50
µA
HM-65162B-9, IO = 0mA,
E = V
- 0.3V, V
= 5.5V
CC
CC
-
-
100
900
µA
µA
HM-65162S-9, HM65162-9,
IO = 0mA, E = V - 0.3V,
CC
V
= 5.5V
CC
HM-65162C-9, IO = 0mA,
E = V - 0.3V, V = 5.5V
CC
CC
ICCSB
ICCEN
ICCOP
Standby Supply Current
-
-
-
8
mA
mA
mA
E = 2.2V, IO = 0mA, V
E = 0.8V, IO = 0mA, V
= 5.5V
= 5.5V
CC
CC
Enabled Supply Current
70
70
Operating Supply Current (Note 1)
E = 0.8V, IO = 0mA, f = 1MHz,
= 5.5V
V
CC
HM-65162B-9, IO = 0mA,
= 2.0V, E = VCC - 0.3V
ICCDR
Data Retention Supply Current
-
-
20
40
µA
µA
V
CC
HM-65162S-9, HM-65162-9,
IO = 0mA, V = 2.0V,
CC
- 0.3V
E = V
CC
-
300
µA
HM-65162C-9, IO = 0mA,
= 2.0V, E = V - 0.3V
V
CC
CC
VCCDR
II
Data Retention Supply Voltage
Input Leakage Current
Input/Output Leakage Current
Input Low Voltage
2.0
-1.0
-1.0
-0.3
2.2
-
-
V
µA
µA
V
+1.0
+1.0
0.8
VI = V
CC
or GND, V
= 5.5V
CC
IIOZ
VIO = V
CC
or GND, V
= 5.5V
CC
V
V
= 4.5V
= 5.5V
IL
CC
CC
V
Input High Voltage
V
+0.3
V
V
IH
CC
VOL
Output Low Voltage
0.4
V
IO = 4.0mA, V
CC
= 4.5V
= 4.5V
VOH1
VOH2
Output High Voltage
2.4
-
-
V
IO = -1.0mA, V
CC
CC
Output High Voltage (Note 2)
V
-0.4
V
IO = -100µA, V
= 4.5V
CC
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Capacitance T = +25 C
A
SYMBOL
PARAMETER
MAX
10
UNITS
TEST CONDITIONS
CI
Input Capacitance (Note 2)
pF
pF
f = 1MHz, All measurements are
referenced to device GND
CIO
Input/Output Capacitance (Note 2)
12
NOTES:
1. Typical derating 5mA/MHz increase in ICCOP.
2. Tested at initial design and after major design changes.
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