Advanced Analog Technology, Inc.
May 2008
AAT1168/1168A/1168B
ELECTRICAL CHARACTERISTICS
( V
DD
= 2.6V to 5.5V, T
C
=
–40
°
C
to 85
°
C
, unless otherwise specified. Typical values are tested at 25
°
C
ambient
temperature, V
DD
= 5V, V
DD1
= 10V.)
N-MOS Switch (Channel 1)
PARAMETER
Current Limit
On-Resistance
Leakage Current
SYMBOL
TEST CONDITION
MIN
TYP
3.0
MAX
UNIT
A
I
LIM
R
ON
I
SWOFF
I
SW
= 1.0A
V
SW
= 12V
0.2
0.01
20.00
µ
A
Negative Charge Pump (Channel 2)
PARAMETER
IN2 Threshold Voltage
IN2 Input Bias Current
OUT2 Leakage Current
OUT2 Source Current
SYMBOL
TEST CONDITIONS
MIN
235
–40
TYP
250
0
MAX
265
40
UNIT
mV
nA
V
IN2
I
B2
I
OFF2
I
OUT2
I
OUT2
=
–100
µ
A
V
IN2
=
–0.25V
to 0.25V
V
IN2
= 0V, OUT2 =
–12V
V
IN2
= 0.35V, OUT2 =
–10V
−
20
1
4
−
50
µ
A
mA
Positive Charge Pump (Channel 3)
PARAMETER
IN3 Threshold Voltage
IN3 Input Bias Current
OUT3 Leakage Current
OUT3 Sink Current
SYMBOL
TEST CONDITIONS
MIN
1.22
–40
TYP
1.25
0
40
1
4
MAX
1.28
40
80
UNIT
V
nA
V
IN3
I
B3
I
OFF3
I
OUT3
I
OUT3
= 100
µ
A
V
IN3
= 1V to1.5V
V
IN3
= 1.4V, OUT3 = 28V
V
IN3
= 1.1V, OUT3 = 25V
µ
A
mA
–
Advanced Analog Technology, Inc. –
Version 1.00
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