Active-Semi
ABSOLUTE MAXIMUM RATINGS
PARAMETER
CHG_IN to GA
t < 1ms and duty cycle <1%
Steady State
VP1 to GP1, VP2 to GP2, VP3 to GP3
BAT, VSYS, INL to GA
SW1, OUT1 to GP1
SW2, OUT2 to GP2
SW3, OUT3 to GP3
ON1, ON2, ON3, ISET, ACIN, VSEL, DCCC, CHGLEV, TH, SCL, SDA, REFBP, nIRQ,
nRSTO, nSTAT0, nSTAT1, BTR, nPBIN to GA
OUT4, OUT5, OUT6 to GA
Operating Ambient Temperature
Maximum Junction Temperature
Maximum Power Dissipation
TQFN55-40 (Thermal Resistance
θ
JA
= 30
o
C/W)
Storage Temperature
Lead Temperature (Soldering, 10 sec)
ACT8810
Rev 8, 08-Oct-10
VALUE
-0.3 to +18
-0.3 to +14
-0.3 to +6
-0.3 to +6
-0.3 to (V
VP1
+0.3)
-0.3 to (V
VP2
+0.3)
-0.3 to (V
VP3
+0.3)
-0.3 to +6
-0.3 to (V
INL
+0.3)
-40 to 85
125
2.7
-65 to 150
300
UNIT
V
V
V
V
V
V
V
V
V
°C
°C
W
°C
°C
: Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods may
affect device reliability.
Innovative Power
TM
ActivePMU
TM
and
ActivePath
TM
are trademarks of Active-Semi.
I
2
C
TM
is a trademark of NXP.
-7-
www.active-semi.com
Copyright © 2010 Active-Semi, Inc.