AD8047/AD8048
ABSOLUTE MAXIMUM RATINGS
1
MAXIMUM POWER DISSIPATION
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Voltage Swing
×
Bandwidth Product (AD8047) . . . 180 V – MHz
(AD8048) . . . 250 V – MHz
2
Internal Power Dissipation
Plastic Package (N) . . . . . . . . . . . . . . . . . . . . . . . . 1.3 Watts
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . 0.9 Watts
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . .
±
V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . .
±
1.2 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range (N, R) . . . . . . . . –65°C to +125°C
Operating Temperature Range (A Grade) . . . –40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300°C
NOTES
1
Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only, and functional
operation of the device at these or any other conditions above those indicated in the
operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2
Specification is for device in free air:
8-Pin Plastic DIP Package:
θ
JA
= 90°C/Watt
8-Pin SOIC Package:
θ
JA
= 140°C/Watt
The maximum power that can be safely dissipated by these de-
vices is limited by the associated rise in junction temperature.
The maximum safe junction temperature for plastic encapsu-
lated devices is determined by the glass transition temperature
of the plastic, approximately +150°C. Exceeding this limit tem-
porarily may cause a shift in parametric performance due to a
change in the stresses exerted on the die by the package. Exceed-
ing a junction temperature of +175°C for an extended period can
result in device failure.
While the AD8047 and AD8048 are internally short circuit pro-
tected, this may not be sufficient to guarantee that the maxi-
mum junction temperature (+150°C) is not exceeded under all
conditions. To ensure proper operation, it is necessary to ob-
serve the maximum power derating curves.
2.0
8-PIN MINI-DIP PACKAGE
T
J
= +150
°
C
MAXIMUM POWER DISSIPATION – Watts
1.5
1.0
METALIZATION PHOTOS
Dimensions shown in inches and (mm).
Connect Substrate to –V
S
.
8-PIN SOIC PACKAGE
0.5
AD8047
+V
S
0
–50 –40 –30 –20 –10
0 10 20 30 40 50 60
AMBIENT TEMPERATURE –
°
C
70
80
90
0.045
(1.14)
V
OUT
Figure 2. Plot of Maximum Power Dissipation vs.
Temperature
ORDERING GUIDE
–IN
–V
S
0.044
(1.13)
+IN
Model
AD8047AN
AD8047AR
AD8047-EB
AD8048AN
AD8048AR
AD8048-EB
Temperature
Range
–40°C to +85°C
–40°C to +85°C
Package
Package
Description Option*
Plastic DIP
SOIC
Evaluation
Board
Plastic DIP
SOIC
Evaluation
Board
N-8
R-8
AD8048
+V
S
–40°C to +85°C
–40°C to +85°C
N-8
R-8
0.045
–OUT (1.14)
*N = Plastic DIP; R= SOIC (Small Outline Integrated Circuit)
–IN
+IN
0.044
(1.13)
–V
S
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although these devices feature proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
REV. 0
–3–
AD [ ANALOG DEVICES ]
