OP292/OP492–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(@ V = 5 V, VC
S
M
= O V, V
O
= 2 V, T
A
= 25 C unless otherwise noted.)
Min
Typ
Max
Unit
Parameter
INPUT CHARACTERISTICS
Offset Voltage
OP292
Symbol
Conditions
V
OS
V
OS
I
B
I
OS
OP492
–40∞C
£
T
A
£
+85∞C
–40∞C
£
T
A
£
+125∞C
–40∞C
£
T
A
£
+85∞C
–40∞C
£
T
A
£
+125∞C
–40∞C
£
T
A
£
+85∞C
–40∞C
£
T
A
£
+125∞C
–40∞C
£
T
A
£
+85∞C
–40∞C
£
T
A
£
+125∞C
V
CM
= 0 V to 4.0 V
–40∞C
£
T
A
£
+85∞C
–40∞C
£
T
A
£
+125∞C
R
L
= 10 k , V
O
= 0.1 V to 4 V
–40∞C
£
T
A
£
+85∞C
–40∞C
£
T
A
£
+125∞C
–40∞C
£
T
A
£
+125∞C
Note 1
–40∞C
£
T
A
£
+85∞C
–40∞C
£
T
A
£
+125∞C
–40∞C
£
T
A
£
+85∞C
–40∞C
£
T
A
£
+125∞C
Input Bias Current
Input Offset Current
0.1
0.3
0.5
0.1
0.3
0.5
450
0.75
3.0
7
100
0.4
0
75
70
65
25
10
5
95
93
90
200
100
50
2
1
6
400
1.5
2
Input Voltage Range
Common-Mode Rejection Ratio
0.8
1.2
2.5
1
1.5
2.5
700
2.5
5.0
50
700
1.2
4.0
CMRR
Large-Signal Voltage Gain
A
VO
DV
OS
/DT
DV
OS
/DT
DI
B
/DT
DI
OS
/DT
Offset Voltage Drift
Long-Term V
OS
Drift
Bias Current Drift
Offset Current Drift
OUTPUT CHARACTERISTICS
Output Voltage Swing
High
10
mV
mV
mV
mV
mV
mV
nA
mA
mA
nA
nA
mA
V
dB
dB
dB
V/mV
V/mV
V/mV
mV/∞C
mV/Month
pA/∞C
pA/∞C
pA/∞C
pA/∞C
V
OUT
Low
V
OUT
Short-Circuit Current Limit
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current Per Amp
OP292, OP492
DYNAMIC PERFORMANCE
Slew Rate
Gain Bandwidth Product
Phase Margin
Channel Separation
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
Current Noise Density
I
SC
PSRR
I
SY
R
L
= 100 k to GND
–40∞C
£
T
A
£
+125∞C
R
L
= 2 k to GND
–40∞C
£
T
A
£
+125∞C
R
L
= 100 k to V+
–40∞C
£
T
A
£
+125∞C
R
L
= 2 k to V+
–40∞C
£
T
A
£
+125∞C
4.0
3.8
3.7
5
75
70
4.3
4.1
3.9
8
12
280
300
8
95
90
0.8
20
20
450
550
V
V
V
mV
mV
mV
mV
mA
dB
dB
V
S
= 4.5 V to 30 V, V
O
= 2 V
–40∞C
£
T
A
£
+125∞C
V
O
= 2 V
1.2
mA
V/ms
V/ms
MHz
Degrees
dB
mV
p-p
nV/÷Hz
pA/÷Hz
SR
GBP
m
R
L
= 10 k
–40∞C
£
T
A
£
+125∞C
f
O
= 1 kHz
0.1 Hz to 10 Hz
f = 1 kHz
1
CS
e
n
p-p
e
n
i
n
3
2
4
75
100
25
15
0.7
NOTES
1
Long-term offset voltage drift is guaranteed by 1,000 hours life test performed on three independent wafer lots at 125
∞C
with LTPD of 1.3.
Specifications subject to change without notice.
–2–
REV. B
AD [ ANALOG DEVICES ]
