2N4427
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
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Silicon NPN, To-39 packaged VHF/UHF Transistor
1 Watt Minimum Power Output @ 175 MHz
500 MHz Current-Gain Bandwidth Product @ 50mA
Power Gain, G
PE
= 10dB (Min) @ 175 MHz
TO-39
1. Emitter
2. Base
3. Collector
DESCRIPTION:
Silicon NPN transistor, designed for VHF and UHF equipment.
Applications include amplifier; pre-driver, driver, and output
stages. Also suitable for oscillator
and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25
°
C)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Parameter
Collector-Emitter
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Value
20
40
2.0
400
Unit
Vdc
Vdc
Vdc
mA
Thermal Data
P
D
Total Device Dissipation @ T
A
= 25ºC
Derate above 25ºC
1.0
5.71
Watts
mW/ º
C
2N4427.PDF 6-25-03
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