Agilent 1GG5-8205
Packaged 13.5 GHz GaAs Diode Limiter
TC626P
Data Sheet
Features
• ESD Protection:
3000V Human Body Model
• Insertion Loss:
1.0 dB Typ.
• Port Match:
S
and S –15 dB Typ.
22
11
• Power Handling:
25 dBm Typ.
P
–1dB
• Distortion:
SHI >100 dBm Typ.
THI +43 dBm Typ.
TOI +43 dBm Typ.
[1]
Absolute Maximum Ratings
Description
The TC626P is a 13.5 GHz GaAs
integrated diode limiter that can
be used to protect sensitive RF
circuits from excess RF power,
DC transients, and ESD.
Symbol
Parameters/Conditions
Min.
Max.
Units
Pcont
Icont
Continuous Input Power
Continuous DC Current
33
160
7
dBm
mA
V
Vcont
Continuous DC Voltage
The circuit contains Planar–
Doped–Barrier (PDB) diodes
with integrated matching net-
works and is fabricated with the
MB6A integrated diode process.
The barrier height of each diode
element and the number of di-
ode elements in each “stack” are
optimized for low distortion
T
Backside Temperature
–55
–65
75
°C
A
T
Operating Channel Temperature
Maximum Assembly Temperature[2]
Storage Temperature
150
300
165
°C
ch
T
°C
max
T
°C
stg
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this
device. TA = 25°C except for Top, Tst, and Tmax
2. Sixty–second maximum.
.
when P <15 dBm, while limit-
in
ing transmitted power when P
>25 dBm.
in
1
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
