ABA-31563 Absolute Maximum Ratings
[1]
Symbol
V
cc
P
in
P
diss
T
j
T
STG
Parameter
Device Voltage, RF output to ground (T = 25°C)
CW RF Input Power (Vcc = 3V)
Total Power Dissipation
[3]
Junction Temperature
Storage Temperature
Units
V
dBm
W
°C
°C
Absolute Max.
6
15
0.3
150
-65 to 150
Thermal Resistance
[2]
(Vcc = 3V)
θ
j-c
= 125°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using 150°C
Liquid Crystal Measurement Technique.
3. Board (package belly) temperature, Tc, is
25°C. Derate 2.3 mW/°C for Tc > 120.8°C.
Electrical Specifications
T
c
= +25°C, Z
o
= 50
Ω,
P
in
= -30 dBm, V
cc
= 3V, Freq = 2 GHz, unless stated otherwise.
Symbol
Gp
[1]
∆Gp
NF
[1]
P1dB
[1]
OIP3
[1]
VSWR
in[1]
VSWR
out[1]
Icc
[1]
Td
[1]
Parameter and Test Condition
Power Gain (|S
21
|
2
)
Power Gain Flatness,
Noise Figure
Output Power at 1dB Gain Compression
Output Third Order Intercept Point
Input VSWR
Output VSWR
Device Current
Group Delay
f = 0.1 ~ 2.5 GHz
f = 0.1 ~ 3.5 GHz
Units
dB
dB
dB
dBm
dBm
Min.
20.0
Typ.
21.5
0.2
1.3
3.8
2.2
13.1
<1.5
<1.5
Max.
Std Dev.
4.8
mA
ps
14
140
16
Notes:
1. Measurements taken on 50Ω test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard
deviation and typical data based on at least 500 parts sample size from 2 wafer lots. Future wafers allocated to this product may have nominal values
anywhere within the upper and lower spec limits.
C
block
1 nF
RF Output
1Kx
RFC
33 nH
RF Input
C
block
1 nF
Vcc
C
bypass
100 pF
C
bypass
1000 pF
Figure 1. ABA-31563 Production Test Circuit.
2
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
