ABA-52563 Absolute Maximum Ratings
[1]
Symbol
V
cc
P
in
P
diss
T
j
T
STG
Parameter
Device Voltage, RF output to ground (T = 25°C)
CW RF Input Power (Vcc = 5V)
Total Power Dissipation
[3]
Junction Temperature
Storage Temperature
Units
V
dBm
W
°C
°C
Absolute Max.
+7
+20
0.4
150
-65 to 150
Thermal Resistance
[2]
(Vcc = 5V):
θ
jc
= 106°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using 150°C
Liquid Crystal Measurement Technique.
3. Board (package belly) temperature, Tb, is
25°C. Derate 3.5 mW/°C for Tb > 109°C.
Electrical Specifications
T
c
= +25°C, Z
o
= 50
Ω,
P
in
= -30 dBm, V
cc
= 5V, Freq = 2 GHz, unless stated otherwise.
Symbol
Gp
[1]
∆Gp
NF
[1]
P1dB
[1]
OIP3
[1]
VSWR
in[1]
VSWR
out[1]
Icc
[1]
td
[1]
Parameter and Test Condition
Power Gain (|S
21
| )
Power Gain Flatness,
Noise Figure
Output Power at 1dB Gain Compression
Output Third Order Intercept Point
Input VSWR
Output VSWR
Device Current
Group Delay
f = 0.1 ~ 2.5 GHz
f = 0.1 ~ 3.5 GHz
2
Units
dB
dB
dB
dBm
dBm
Min.
20
Typ.
21.5
0.5
2.1
3.3
9.8
19.9
1.2
1.4
Max.
Std Dev.
0.2
4
0.12
0.15
0.18
mA
ps
35
150
43
0.5
Notes:
1. Measurements taken on 50Ω test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard
deviation and typical data based on at least 500 parts sample size from 6 wafer lots. Future wafers allocated to this product may have nominal values
anywhere within the upper and lower spec limits.
C
block
RF Output
2Hx
RFC
Vcc
RF Input
C
block
C
bypass
Figure 1. ABA-52563 Production Test Circuit.
2
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
