4.8 V NPN Common Emitter
Medium Power Output Transistor
Technical Data
AT-31625
Features
• 4.8 Volt Operation
• +28.0 dBm P
out
@ 900 MHz,
Typ.
• 70% Collector Efficiency
@ 900 MHz, Typ.
• 9 dB Power Gain @ 900 MHz,
Typ.
• -31 dBc IMD
3
@ P
out
of
21 dBm per Tone, 900 MHz,
Typ.
• 50% Smaller than SOT-223
Package
MSOP-3 Surface Mount
Plastic Package
Outline 25
Description
Hewlett Packard’s AT-31625 is a
low cost, NPN medium power
silicon bipolar junction transistor
housed in a miniature, MSOP-3
surface mount plastic package.
The AT-31625 can be used as a
driver device or an output device,
depending on the specific applica-
tion. The AT-31625 features
+28 dBm CW output power when
operated at 4.8 volts. Excellent
gain and superior efficiency make
the AT-31625 ideal for use in
battery powered systems.
The AT-31625 is fabricated with
Hewlett Packard’s 10 GHz F
t
Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
Pin Configuration
COLLECTOR
4
Applications
• Medium Power Driver
Device for Cellular/PCS,
ISM 900, WLAN
• Output Power Device for
ISM 900, Cordless, WLAN
EMITTER 1
2
3 EMITTER
BASE
4-43
5965-5911E
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
