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AT-41533-TR1 参数 Datasheet PDF下载

AT-41533-TR1图片预览
型号: AT-41533-TR1
PDF下载: 下载PDF文件 查看货源
内容描述: 通用型,低噪声NPN硅双极晶体管 [General Purpose, Low Noise NPN Silicon Bipolar Transistor]
分类和应用: 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
文件页数/大小: 10 页 / 104 K
品牌: AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
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General Purpose, Low Noise
NPN Silicon Bipolar Transistor
Technical Data
AT-41511
AT-41533
Features
• General Purpose NPN
Bipolar Transistor
• 900 MHz Performance:
AT-41511:
1 dB NF, 15.5 dB G
A
AT-41533:
1 dB NF, 14.5 dB G
A
• Characterized for 3, 5, and
8 Volt Use
• SOT-23 and SOT-143 SMT
Plastic Packages
• Tape-and-Reel Packaging
Option Available
[1]
Description
Hewlett-Packard’s AT-41511 and
AT-41533 are general purpose
NPN bipolar transistors that offer
excellent high frequency
performance at an economical
price. The AT-41533 uses the
3 lead SOT-23, while the AT-415 11
places the same die in the lower
parasitic 4 lead SOT-143. Both
packages are industry standard,
and compatible with high volume
surface mount assembly
techniques.
The 4 micron emitter-to-emitter
pitch of these transistors yields
high performance products that
can perform a multiplicity of
tasks. The 14 emitter finger
interdigitated geometry yields an
intermediate-sized transistor with
easy to match to impedances, low
noise figure, and moderate
power.
Optimized for best performace
from a 5 to 8 volt bias supply,
these transistors are also good
performers at 2.7 V. Applications
include use in wireless systems as
an LNA, gain stage, buffer,
oscillator, or active mixer.
An optimum noise match near
50 ohms at 900 MHz makes these
devices particularly easy to use as
LNAs. Typical amplifier designs
at 900 MHz yield 1 dB noise
figures with 15 dB or more
associated gain at a 5 V, 5 mA
bias, with good gain and noise
figure obtainable at biases as low
as 2 mA.
The AT-415 series bipolar
transistors are fabricated using
Hewlett-Packard’s 10 GHz f
T
Self-
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by
the use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
Outline Drawing
EMITTER COLLECTOR
415
BASE
EMITTER
SOT 143 (AT-41511)
COLLECTOR
415
BASE
EMITTER
SOT 23 (AT-41533)
1. Refer to “Tape-and-Reel Packaging for
Semiconductor Devices.”
5965-8929E
4-134