Absolute Maximum Ratings
[1]
(T
A
= 25
°
C)
Symbol
V
d
P
t
P
in RF
P
in LO
T
j
T
STG
θ
jc
Parameter
Device Voltage
Total Device
Dissipation
[2]
RF Input Power
LO Input Power
Junction Temperature
Storage Temperature
Thermal Resistance
Junction to Case
[3]
Units
V
mW
dBm
dBm
°C
°C
°C/W
Value
15
1200
C
20
15
IF = 70 MHz
G (dB)
+14
+14
150
-65 to +150
92
10
IF = 2 GHz
5
0
0.1
0.2
0.5
1.0
2.0
5.0
10
RF FREQUENCY (GHz)
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to
this device.
2. Derate at 10.9 mW/°C for T
PIN 3
> 40°C.
3. T
j
= 150°C.
Figure 1. Typical RF to IF Conversion
Gain vs. RF Frequency, T
A
= 25
°
C, Low
Side LO.
IAM-82008 Electrical Specifications
V
CC
= 10 V, Z
O
= 50
Ω,
LO = 0 dBm, RF = -20 dBm, T
A
= 25°C
Symbol
G
C
f
3 dB
RF
f
3 dB
IF
P
1 dB
IP
3
NF
VSWR
Parameter
Conversion Gain, RF = 2 GHz,
LO = 1.75 GHz
RF Bandwidth (G
C
3 dB down),
IF = 250 MHz
IF Bandwidth (G
C
3 dB down),
LO = 2 GHz
Output Power at 1 dB Gain Compression,
RF = 2 GHz, LO = 1.75 GHz
Third Order Inpercept Point,
RF = 2 GHz, LO = 1.75 GHz
SSB Noise Figure
RF Port VSWR
LO Port VSWR
IF Port VSWR
RF
if
LO
if
LO
rf
I
CC
RF Feedthrough at IF Port
LO Leakage at IF Port
LO Leakage at RF Port
Supply Current
dBc
dBm
dBm
mA
40
Units
dB
Minimum
13
Typical
15
Maximum
17
GHz
GHz
dBm
dBm
dB
5.5
0.5
8
18
19
1.5:1
2.0:1
2.5:1
-30
-15
-22
55
65
Note:
1. The recommended operating voltage range for this device is 7 to 13 V. Typical performance as a function of voltage is shown on the
following page.
7-128
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
