Simplified Schematic
Vd
I
bias
Id = I
ds
+ I
bias
R
bias
Feedback
V
bias
4
Input
match
3
Bias
6
I
ds
1, 2, 5
MGA-62563 Absolute Maximum Ratings
[1]
Symbol
V
d
I
d
P
in
I
ref
P
diss
T
CH
T
STG
θ
ch_b
Parameter
Device Voltage (pin 6)
[2]
Device Current (pin 6)
[2]
CW RF Input Power (pin 3)
[3]
Bias Reference Current (pin 4)
Total Power Dissipation
[4]
Channel Temperature
Storage Temperature
Thermal Resistance
[5]
Units
V
mA
dBm
mA
mW
°C
°C
°C/W
Absolute
Maximum
6
100
21
12
600
150
150
97
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Bias is assumed at DC quiescent conditions.
3. With the DC (typical bias) and RF applied to
the device at board temperature T
B
= 25°C.
4. Total dissipation power is referred to lead "5"
temperature. Tc=92°C, derate Pdiss at
10.3mW/°C for Tc>92°C.
5. Thermal resistance measured using 150°C
Liquid Crystal Measurement method.
+
_
3V
10 nF
68 pF
240Ω
47 nH
4
6.8 nH
MGA-62563
3
100 pF
1 2 5
6
100 pF
Figure 1a. Test circuit of the 0.5 GHz production test board used for NF, Gain and OIP3 measure-
ments. This circuit achieves a trade-off between optimal NF, Gain, OIP3 and input return loss.
Circuit losses have been de-embedded from actual measurements.
2
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
