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EQ-730L 参数 Datasheet PDF下载

EQ-730L图片预览
型号: EQ-730L
PDF下载: 下载PDF文件 查看货源
内容描述: EQ- 730L由一个的InAs量子阱霍尔元件和包中的信号处理的IC芯片 [EQ-730L is composed of an InAs Quantum Well Hall Element and a signal processing IC chip in a package]
分类和应用:
文件页数/大小: 4 页 / 122 K
品牌: AKM [ ASAHI KASEI MICROSYSTEMS ]
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EQ-730L
●Electric characteristics
A
=25℃, V
CC
=5V)
(T
Parameter
Current
consumption
(*1)
(*1)
Symbol
I
CC
Conditions
B=0mT with no load
min
Typ
9
Max
12
V
CC
0.3
Unit
mA
V
V
kHz
Output saturation voltage at High Level
Output saturation voltage at Low Level
B a n d w i d t h
V
SATH
I
OUT
=ー1mA
V
SATL
f
T
I
OUT
=1mA
ー3dB C
L
=1000pF
Rise time : 10% of Input MFD to 90% of output voltage.
Fall time: 90% of Input MFD to 10% of output voltage.
(under input/output MFD step is 1 to 2μs)
C
L
=1000pF
10% to 90% of output voltage under
input/output MFD step is 1 to 2μs.
C
L
=1000pF
90% to 10% of output voltage under
input/output MFD step is 1 to 2μs
C
L
=1000pF
Rise time : 10% of Input MFD to 10% of output voltage.
Fall time: 90% of Input MFD to 90% of output voltage.
(under input/output MFD step is 1 to 2μs)
C
L
=1000pF
V
CC
−0.3
0
140
(*2)
Response time
(*2)
t
RES
2
μs
Output rise time
(*2)
t
RISE
3
μs
Output fall time
(*2)
t
FALL
Output delay time
(*2)
t
REAC
0.3
μs
Output noise voltage
(*2)
V
Np-p
10
mVp-p
※1mT = 10Gauss
(*1&2) Design target at 25℃
●Magnetic characteristics
A
=25℃, V
CC
=5V)
(T
Parameter
Sensitivity
(*3)
Symbol
V
h
Conditions
B=0、
±11mT with no load
B=0mT (I
OUT
=0mA)
B=±13mT (I
OUT
=±1mA)
min Typ Max Unit
110 130 150 mV/mT
2.3
−0.5
2.5
2.7
V
●Ratio-metric characteristics
A
=25℃)
(T
Parameter
Error in Ratiometric of
Magnetic sensitivity
(*5)
Symbol
V
h-R
Conditions
B=0、
±11mT with no load
min Typ Max Unit
−3
−3
3
3
%
%
Quiescent voltage
V
OUT0
B=0mT
L i n e a r i t y
(*4)
ρ
0.5 %F.S.
Error in Ratiometric of
B=0mT
V
Quiescent voltage
(*5)
OUT0-R
(*5) See Characteristic Definitions section
(*3) See Characteristic Definitions section
(*4) See Characteristic Definitions section
※1mT = 10Gauss
※1mT = 10Gauss
●Characteristic Definitions
①Magnetic sensitivity V
h
(mV/mT)
Magnetic sensitivity is defined as the slope of the straight line
obtained from three points, Quiescent voltage V
OUT0
OUT
V
(+B)、
OUT
(−B) (B is described in measurement condition),
V
by the least square approximation.
②Linearity ρ (%F.S.)
Linearity is defined as the ratio of a error voltage against
FULLSCALE. Where error voltage is calculate as the
difference from the straight line obtained from three points,
Quiescent voltage V
OUT0
OUT
(+B)、
OUT
(−B) (B and
V
V
Output current are described in measurement condition
shown below), by the least square approximation.
〈Condition〉0mT applied、
OUT
= 0mA
I
+BmT applied : I
OUT
=+1.0mA
(Draw out from output)
−BmT applied : I
OUT
=−1.0mA
(Draw in to output)
(B)½V
h
×B+V
int
½
V
out
ρ=            ×100
(+B)
out
ーV (ーB)
V
out
Where FULLSCALE(F.S.) is defied as V
OUT
(+B)、
OUT
(−B),
V
Vint is y-intercepts of the line obtained in the Definition of
Magnetic sensitivity.
③Error in Ratiometric of Magnetic sensitivity and Error in
Ratiometric of quiescent voltage
Error in ratiometric is defined as the ratio of the variation of
sensitivity and quiescent voltage at 3V and 5V as following
equations..
V(V
CC
=3V) 3
V
OUT0
V
CC
=3V) 3
h
h
V(V
CC
=5V) 5
V
OUT0
V
CC
=5V) 5
V
hーR
=        ×100 V
OUT0ーR
=         ×100
3
3
5
5
④Response time t
RES
(μs)
Response time is defined as the time from the 90% reach
point of input magnetic field rise up to the 90% reach point of
output voltage rise up
⑤Output rise time, Output fall time  t
RISE
FALL
t (μs)
 Output rise up time is defined as the time from the 10% point
to the 90% point of output voltage under a pulse like
magnetic field input shown below.
Output fall down time is defined as the time from the 90%
point to the 10% point of output voltage under a pulse like
magnetic field input shown below.
⑥Output delay time t
REAC
μs)
Output delay time is defined as the time from the 10% point
in rise up(90% point in fall down) of input magnetic field to
the 10% point in rise up(90% point in fall down) of output
voltage under a pulse like magnetic field input shown below..
〈Relations of the input Magnetic field and t
RES
RISE
FALL
t
t
t
REAC
Rise time of magnetic field
1∼2μs
90%
90%
Fall time of magnetic field
1∼2μs
Input magnetic field
10%
t
RES
t
RISE
90%
90%
t
REA
10%
t
REA
t
RES
t
FALL
10%
Output voltage
of sensor
10%