欢迎访问ic37.com |
会员登录 免费注册
发布采购

2SC3264 参数 Datasheet PDF下载

2SC3264图片预览
型号: 2SC3264
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅外延平面晶体管 [Silicon NPN Epitaxial Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 33 K
品牌: ALLEGRO [ ALLEGRO MICROSYSTEMS ]
   
LAPT
2SC3264
Application :
Audio and General Purpose
(Ta=25°C)
Ratings
100
max
100
max
230
min
50
min
2.0
max
60
typ
250
typ
V
MHz
pF
20.0min
4.0max
Silicon NPN Epitaxial Planar Transistor
(Complement to type 2SA1295)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
230
230
5
17
5
200(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=230V
V
EB
=5V
I
C
=25mA
V
CE
=4V, I
C
=5A
I
C
=5A, I
B
=0.5A
V
CE
=12V, I
E
=–2A
V
CB
=10V, f=1MHz
External Dimensions
MT-200
36.4
±0.3
24.4
±0.2
2-ø3.2
±0.1
9
7
21.4
±0.3
2.1
6.0
±0.2
Unit
µ
A
µ
A
V
a
b
2
3
1.05
+0.2
-0.1
5.45
±0.1
B
C
E
5.45
±0.1
0.65
+0.2
-0.1
3.0
+0.3
-0.1
∗h
FE
Rank O(50 to 100), Y(70 to 140)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
60
R
L
(Ω)
12
I
C
(A)
5
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.5
I
B2
(A)
–0.5
t
on
(
µ
s)
0.30typ
t
stg
(
µ
s)
2.40typ
t
f
(
µ
s)
0.50typ
Weight : Approx 18.4g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
3.
0A
2.
0A
V
C E
(sat) – I
B
Characteristics
(Typical)
C ol l e c t o r - E m i t te r S at u r a t i o n Vo lt a g e V
C E(s at)
( V )
3
I
C
– V
B E
Temperature Characteristics
(Typical)
( V
CE
= 4 V )
17
15
17
1
.5A
1.0
A
A
15
C o l l e c t o r Cu r r e n t I
C
( A )
400m
10
A
2
C ol l e c t o r C ur r e nt I
C
( A )
600m
200m
A
10
p)
em
eT
5
I
B
=20mA
0
5A
0
0
0
1
2
3
4
0
0 .5
1. 0
1 .5
2 .0
0
–30˚
1
C (C
50mA
I
C
= 1 0A
5
125
˚C (
Cas
25˚C
ase
1
Tem
100mA
p)
2
3
Co l le ct o r -Em i t t er V ol tag e V
C E
(V )
Ba s e C ur r en t I
B
( A)
Ba s e- E m i t t or V o l t a ge V
BE
( V )
(V
C E
= 4 V )
200
D C C u r r e n t Gai n h
FE
DC C ur r e nt Ga i n h
F E
200
12 5˚ C
100
100
50
( V
C E
= 4 V)
Transient Thermal Resistance
θ
j- a
( ˚ C /W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
3
Typ
50
2 5˚ C
–3 0 ˚ C
1
0 .5
10
10
0.02
0. 1
0. 5
1
5
10 17
0.02
0.1
0 .5
1
5
10 17
0 .1
1
10
10 0
Time t(ms)
1000 2000
C ol l ec t or C urre nt I
C
(A )
Co l le c to r Cu r r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
( V
C E
=1 2 V )
100
40
Safe Operating Area
(Single Pulse)
2 00
10
m
Pc – Ta Derating
80
C ut- off F r eq u e n c y f
T
( M H
Z
)
Ma x im um P ow e r D i s s i p a ti o n P
C
( W )
s
10
DC
1 60
W
ith
Typ
60
C olle c t or Cu r r e n t I
C
(A )
5
In
fin
1 20
ite
he
at
si
nk
40
1
0.5
Without Heatsink
Natural Cooling
80
20
40
0
–0.02
0.1
–0 . 1
–1
–10
3
10
10 0
30 0
Emi t t e r Curre nt I
E
(A )
Co ll e ct o r - Em i t te r Vo lt a ge V
C E
( V)
5
0
W i t ho u t H ea t s i nk
0
25
50
75
100
125
150
Am b i e n t T e m p er at u r e T a ( ˚ C )
65