AF1333P
P-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(Note 1)
Pulsed Drain Current
(Note 2, 3)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
T
A
=25ºC
T
A
=70ºC
T
A
=25ºC
Rating
-20
±12
-550
-440
-2.5
0.35
0.003
-55 to +150
-55 to +150
Unit
V
V
mA
A
W
W/
o
C
o
C
o
C
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-Ambient
(Note 1)
Max.
Value
360
Unit
ºC/W
Electrical Characteristics
at T
A
=25
o
C (unless otherwise specified)
Symbol
BV
DSS
∆BV
DSS
/
∆T
J
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Test Conditions
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=-250uA
Breakdown Voltage Temperature Reference to 25
o
C,
I
D
=-1mA
Coefficient
V
GS
=-10V, I
D
=-550mA
Static Drain-Source
V
GS
=-4.5V, I
D
=-550mA
On-Resistance
V
GS
=-2.5V, I
D
=-300mA
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=-250uA
Forward Transconductance
V
DS
=-5V, I
D
=-500mA
Drain-Source Leakage Current
V
DS
=-20V, V
GS
=0V
(T
J
=25
o
C)
Drain-Source Leakage Current
V
DS
=-16V, V
GS
=0V
(T
J
=70
o
C)
Gate-Source Leakage
V
GS
=±12V
Total Gate Charge
(Note 3)
I
D
=-500mA,
V
DS
=-16V,
Gate-Source Charge
V
GS
=-4.5V
Gate-Drain (“Miller”) Charge
Turn-On Delay Time
(Note 3)
V
DS
=-10V,
I
D
=-500mA,
Rise Time
R
G
=3.3Ω, V
GS
=-5V
Turn-Off Delay Time
R
D
=20Ω
Fall-Time
Input Capacitance
V
GS
=0V,
V
DS
=-10V,
Output Capacitance
f=1.0MHz
Reverse Transfer Capacitance
Min.
-20
-
-
-
-
-0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.01
-
-
-
-
1
-
-
-
1.7
0.3
0.4
5
8
10
2
66
25
20
Max.
-
-
600
800
1000
-1.2
-
-1
uA
-10
±100
2.7
-
-
-
-
-
-
105.6
-
-
nA
nC
Unit
V
V/
o
C
mΩ
V
S
ns
pF
Source-Drain Diode
Note 1:
Surface mounted on FR4 board, t
≤
10 sec.
Note 2:
Pulse width limited by Max. junction temperature.
Note 3:
Pulse width
≤
300us, duty cycle
≤
2%.
Symbol
V
DS
Parameter
Forward On Voltage
(Note 3)
Test Conditions
I
S
=-300mA, V
GS
=0V
Min.
-
Typ.
-
Max.
-1.2
Unit
V
Anachip Corp.
www.anachip.com.tw
2/5
Rev. 1.0
Oct 15, 2004
ANACHIP [ ANACHIP CORP ]
