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AF40P03DA 参数 Datasheet PDF下载

AF40P03DA图片预览
型号: AF40P03DA
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型功率MOSFET [P-Channel Enhancement Mode Power MOSFET]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 431 K
品牌: ANACHIP [ ANACHIP CORP ]
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AF40P03
P-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
=10V
Pulsed Drain Current
(Note 1)
Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
T
C
=25ºC
T
C
=100ºC
T
C
=25ºC
Rating
-30
±20
-30
-18
-120
31.3
0.25
-55 to 150
-55 to 150
Units
V
V
A
A
W
W/ºC
ºC
ºC
Thermal Data
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance Junction-Case
Thermal Resistance Junction- Ambient
Max.
Max.
Maximum
4.0
110
Units
ºC/W
ºC/W
Electrical Characteristics
(T
J
=25ºC unless otherwise noted)
Symbol
BV
DSS
∆BV
DSS
/∆T
J
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Static Drain-Source
On-Resistance
(Note 2)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage
Current(T
J
=25ºC)
Drain-Source Leakage
Current(T
J
=150ºC)
Gate Source Leakage
Total Gate Charge
(Note 2)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time
(Note 2)
Rise Time
Turn-Off Delay Time
Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
GS
=0V, I
D
=-250uA
Reference to 25ºC,
I
D
=-1mA
V
GS
=-10V, I
D
=-18A
V
GS
=-4.5V, I
D
=-14A
V
DS
= V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-18A
V
DS
=-30V, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
GS
=±20V
I
D
=-18A
V
DS
=-24V
V
GS
=-4.5V
V
DS
=-15V
I
D
=-18A
R
G
=3.3Ω, V
GS
=-10V
R
D
=0.8Ω
V
GS
=0V
V
DS
=-25V,
f=1.0MHz
Min.
-30
-
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Limits
Typ.
-
-0.02
-
-
-
20
-
-
-
14
3
9
12
56
30
57
915
280
195
Max.
-
-
28
50
-
-
-1
uA
-25
±100
22
-
-
-
-
-
-
1465
-
-
nA
nC
Unit
V
V/ºC
mΩ
V
S
nS
pF
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
(Note 2)
Reverse Recovery Time
(Note 2)
Reverse Recovery Charge
Test Conditions
I
S
=-18A, V
GS
=0V
I
S
=-18A, V
GS
=0V,
Dl/dt=-100A/µs
Min.
-
-
-
Typ.
-
30
21
Max.
-1.2
-
-
Unit
V
ns
nC
Anachip Corp.
www.anachip.com.tw
2/5
Rev. 1.0
Aug 10, 2005