AF4502C
P & N-Channel 30-V (D-S) MOSFET
Specifications
(T
A
=25ºC unless otherwise noted)
Symbol
Dynamic
Q
g
Q
gs
Q
gd
Switching
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
N-Channel
V
DD
=15, V
GS
=10V
I
D
=1A, R
GEN
=25Ω
P-Channel
V
DD
=-15, V
GS
=-10V
I
D
=-1A, R
GEN
=15Ω
N
P
N
P
N
P
N
P
-
-
-
-
-
-
-
20
15
9
16
70
62
20
46
30
26
20
21
102
108
81
71
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
N-Channel
V
DS
=15V, V
GS
=4.5V
I
D
=10A
P-Channel
V
DS
=-15V, V
GS
=-4.5V
I
D
=-10A
N
P
N
P
N
P
-
-
-
-
-
-
12
13
3.3
5.8
4.5
12
19
26
-
-
-
-
Parameter
Test Conditions
Ch
Limits
Min.
Typ.
Max.
Unit
nC
nS
Note 3:
Pulse test: PW
<
300us duty cycle
<
2%.
Note 4:
Guaranteed by design, not subject to production testing.
Anachip Corp.
www.anachip.com.tw
3/8
Rev. 1.1 Jul 20, 2004
ANACHIP [ ANACHIP CORP ]
