AF60N03
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
=10V
Pulsed Drain Current
(Note 1)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
T
C
=25ºC
T
C
=100ºC
T
C
=25ºC
Rating
30
±20
45
32
120
44
0.352
-55 to 175
-55 to 175
Units
V
V
A
A
W
W/ºC
ºC
ºC
Thermal Data
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance Junction-Case
Thermal Resistance Junction- Ambient
Max.
Max.
Maximum
3.4
110
Units
ºC/W
ºC/W
Electrical Characteristics
(T
J
=25ºC unless otherwise noted)
Symbol
BV
DSS
∆BV
DSS
/∆T
J
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Static Drain-Source
On-Resistance
(Note 2)
Gate Threshold Voltage
Forward Transconductance
(Note 2)
Drain-Source Leakage Current
(T
J
=25ºC)
Drain-Source Leakage Current
(T
J
=175ºC)
Gate Source Leakage
Total Gate Charge
(Note 2)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time
(Note 2)
Rise Time
Turn-Off Delay Time
Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
GS
=0V, I
D
=250uA
Reference to 25ºC,
I
D
=1mA
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=15A
V
DS
= V
GS
, I
D
=250uA
V
DS
=10V, I
D
=10A
V
DS
=30V, V
GS
=0V
V
DS
=24V, V
GS
=0V
V
GS
=±20V
I
D
=20A
V
DS
=20V
V
GS
=4.5V
V
DS
=15V
I
D
=20A
R
G
=3.3Ω, V
GS
=10V
R
D
=0.75Ω
V
GS
=0V
V
DS
=25V,
f=1.0MHz
Min.
30
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Limits
Typ.
-
0.026
-
-
-
25
-
-
-
11.6
3.9
7
8.8
57.5
18.5
6.4
1135
200
135
Max.
-
-
12
25
3
-
1
uA
250
±100
-
-
-
-
-
-
-
-
-
-
nA
nC
Unit
V
V/ºC
mΩ
V
S
nS
pF
Source-Drain Diode
Symbol
Parameter
V
SD
Forward On Voltage
(Note 2)
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
Note 1:
Pulse width limited by safe operating area.
Note 2:
Pulse width < 300us, duty cycle < 2%.
Test Conditions
I
S
=45A, V
GS
=0V
I
S
=20A, V
GS
=0V,
dl/dt=100A/µs
Min.
-
-
-
Typ.
-
23.3
16
Max.
1.3
-
-
Unit
V
ns
nC
Anachip Corp.
www.anachip.com.tw
2/5
Rev. 1.0
Sep 8, 2005
ANACHIP [ ANACHIP CORP ]
