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AF70N03 参数 Datasheet PDF下载

AF70N03图片预览
型号: AF70N03
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-Channel Enhancement Mode Power MOSFET]
分类和应用:
文件页数/大小: 5 页 / 454 K
品牌: ANACHIP [ ANACHIP CORP ]
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AF70N03
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
=10V
Pulsed Drain Current
(Note 1)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
T
A
=25ºC
T
A
=100ºC
T
A
=25ºC
Rating
30
±20
60
43
195
53
0.36
-55 to 175
-55 to 175
Units
V
V
A
A
W
W/ºC
ºC
ºC
Thermal Data
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance Junction-Case
Thermal Resistance Junction- Ambient
Max.
Max.
Maximum
2.8
110
Units
ºC/W
ºC/W
Electrical Characteristics
(T
J
=25ºC unless otherwise noted)
Symbol
BV
DSS
∆BV
DSS
/∆T
J
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Static Drain-Source
On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage
Current(T
J
=25ºC)
Drain-Source Leakage
Current(T
J
=175ºC)
Gate Source Leakage
Total Gate Charge
(Note 2)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time
(Note 2)
Rise Time
Turn-Off Delay Time
Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
GS
=0V, I
D
=250uA
Reference to 25ºC,
I
D
=1mA
V
GS
=10V, I
D
=33A
V
GS
=4.5V, I
D
=20A
V
DS
= V
GS
, I
D
=250uA
V
DS
=10V, I
D
=33A
V
DS
=30V, V
GS
=0V
V
DS
=24V, V
GS
=0V
V
GS
=±20V
I
D
=33A
V
DS
=20V
V
GS
=4.5V
V
DS
=15V
I
D
=33A
R
G
=3.3Ω, V
GS
=10V
R
D
=0.45Ω
V
GS
=0V
V
DS
=25V,
f=1.0MHz
Min.
30
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Limits
Typ.
-
0.032
-
-
-
35
-
-
-
16.5
5
10.3
8.2
105
21.4
8.5
1485
245
170
Max.
-
-
9
18
3
-
1
uA
250
±100
-
-
-
-
-
-
-
-
-
-
nA
nC
Unit
V
V/ºC
mΩ
V
S
nS
pF
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
Parameter
Continuous Source Current (Body
Diode)
Pulsed Source Current (Body Diode)
(Note 1)
Test Conditions
V
D
=V
G
=0V, V
S
=1.3V
Min.
-
-
Typ.
-
-
-
Max.
60
195
1.3
Unit
A
A
V
Forward On Voltage
(Note 2)
T
J
=25ºC, I
S
=60A,
V
GS
=0V
-
Anachip Corp.
www.anachip.com.tw
2/5
Rev. 1.0
Aug 10, 2005