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AF8510C 参数 Datasheet PDF下载

AF8510C图片预览
型号: AF8510C
PDF下载: 下载PDF文件 查看货源
内容描述: N和P沟道增强型功率MOSFET [N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 8 页 / 317 K
品牌: ANACHIP [ ANACHIP CORP ]
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AF8510C
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
STG
N-Channel P-Channel
Drain-Source Voltage
30
-30
Gate-Source Voltage
±20
±20
T
A
=25ºC
6.9
-5.3
Continuous Drain Current
(Note 1)
5.5
-4.2
T
A
=70ºC
Pulsed Drain Current
(Note 2)
30
-30
Total Power Dissipation
T
A
=25ºC
2.0
Linear Deratomg Factor
0.016
Operating Junction and Storage Temperature Range
-55 to 150
Parameter
Units
V
V
A
W
W/ ºC
ºC
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
(Note 1)
Max.
Maximum
62.5
Units
ºC/W
N-CH Electrical Characteristics
at T
J
=25ºC unless otherwise specified
Symbol
BV
DSS
 
BV
DSS
/ T
J
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Static Drain-Source
On-Resistance
(Note 3)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
(T
J
=25
o
C)
Drain-Source Leakage Current
(T
J
=70
o
C)
Gate-Source Leakage
Total Gate Charge
(Note 3)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time
(Note 3)
Rise Time
Turn-Off Delay Time
Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
GS
=0V, I
D
=250uA
Reference to 25
o
C,
I
D
=1mA
V
GS
=10V, I
D
=5A
V
GS
=4.5V, I
D
=3A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=5A
V
DS
=30V, V
GS
=0V
V
DS
=24V, V
GS
=0V
V
GS
=±20V
I
D
=6.9A,
V
DS
=24V,
V
GS
=4.5V
V
DS
=15V,
I
D
=1A,
R
G
=3.3Ω, V
GS
=10V
R
D
=15Ω
V
GS
=0V,
V
DS
=25V,
f=1.0MHz
Min.
30
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.02
-
-
-
4.6
-
-
-
10
2
6
8
7
20
6
540
160
120
Max.
-
-
28
40
3
-
1
uA
25
±100
16
-
-
-
-
-
-
870
-
-
nA
nC
Units
V
V/ C
mΩ
V
S
o
ns
pF
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
(Note 3)
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=1.7A, V
GS
=0V
I
S
=6.9A, V
GS
=0V
dl/dt=100A/µs
Min.
-
-
-
Typ.
-
20
11
Max.
1.2
-
-
Unit
V
ns
nC
Anachip Corp.
www.anachip.com.tw
2/8
Rev. 1.0
Nov 14, 2005