AF9410N
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(Note 1)
Pulsed Drain Current
(Note 2)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
T
A
=25ºC
T
A
=70ºC
T
A
=25ºC
Rating
30
±25
9.6
7.7
40
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
W
W/ºC
ºC
ºC
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
(Note 1)
Max.
Maximum
50
Units
ºC/W
Electrical Characteristics
at T
J
=25ºC unless otherwise specified
Symbol
BV
DSS
∆BV
DSS
/
∆T
J
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
G
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Static Drain-Source
On-Resistance
(Note 3)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
(T
J
=25
o
C)
Drain-Source Leakage Current
(T
J
=70
o
C)
Gate-Source Leakage
Total Gate Charge
(Note 3)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time
(Note 3)
Rise Time
Turn-Off Delay Time
Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Test Conditions
V
GS
=0V, I
D
=250uA
Reference to 25
o
C,
I
D
=1mA
V
GS
=10V, I
D
=9A
V
GS
=4.5V, I
D
=7A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=9A
V
DS
=30V, V
GS
=0V
V
DS
=24V, V
GS
=0V
V
GS
=±25V
I
D
=9A,
V
DS
=20V,
V
GS
=4.5V
V
DS
=15V,
I
D
=1A,
R
G
=3.3Ω, V
GS
=10V
R
D
=15Ω
V
GS
=0V,
V
DS
=25V,
f=1.0MHz
f=1.0MHz
Min.
30
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.04
-
-
-
13
-
-
-
11
3
7
10
6
23
7
840
190
140
1.4
Max.
-
-
18
28
3
-
1
uA
25
±100
18
-
-
-
-
-
-
1350
-
-
-
nA
nC
Units
V
V/
o
C
mΩ
V
S
ns
pF
Ω
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
(Note 3)
Reverse Recovery Time
Reverse Recovery Charge
2
Test Conditions
I
S
=2.1A, V
GS
=0V
I
S
=9A, V
GS
=0V,
dl/dt=100A/µs
o
Min.
-
-
-
Typ.
-
18
8
Max.
1.2
-
-
Unit
V
ns
nC
Note 1:
Surface mounted on 1 in copper pad of FR4 board, t
≤
10 sec; 125 C/W when mounted on Min. copper pad.
Note 2:
Pulse width limited by Max. junction temperature.
Note 3:
Pulse width
≤
300us, duty cycle
≤
2%.
Anachip Corp.
www.anachip.com.tw
2/5
Rev. 1.3
Nov 19, 2004
ANACHIP [ ANACHIP CORP ]
