AF9902M
2N and 2P-Channel Enhancement Mode Power MOSFET
Electrical Characteristics
(T
J
=25ºC unless otherwise specified)
Symbol
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Turn-On Delay Time
(Note 3)
Rise Time
Turn-Off Delay Time
Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
N-Channel
V
DS
=15V, V
GS
=5V
I
D
=1A, R
G
=3.3Ω,
R
D
=15Ω
P-Channel
V
DS
=-15V, V
GS
=-5V
I
D
=-1A, R
G
=3.3Ω,
R
D
=15Ω
N-Channel
V
GS
=0V, V
DS
=25V
f=1.0MHz
P-Channel
V
GS
=0V, V
DS
=-25V
f=1.0MHz
CH
N
P
N
P
N
P
N
P
N
P
N
P
N
P
Limits
Min.
Typ.
-
8
-
8
-
9
-
9
-
17
-
25
-
5
-
14
-
630
-
690
-
140
-
170
-
65
-
75
Max.
-
-
-
-
-
-
-
-
1000
1100
-
-
-
-
Unit
ns
pF
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
(Note 3)
Reverse Recovery Time
Reverse Recovery Charge
2
Test Conditions
I
S
=1.2A, V
GS
=0V
I
S
=-1.2A, V
GS
=0V
N-Channel
I
S
=4A, V
GS
=0V
dl/dt=100A/µs
P-Channel
I
S
=-3A, V
GS
=0V
dl/dt=-100A/µs
CH
N
P
N
P
N
P
Limits
Min.
Typ.
-
-
-
-
-
17
-
-
-
25
9
20
Max.
1.2
-1.2
-
-
-
-
Unit
V
ns
nC
Note 1:
Surface Mounted on 1 in copper pad of FR4 board; t
≤10sec;
186ºC/W when mounted on Min. copper pad.
Note 2:
Pulse width limited by Max. junction temperature
Note 3:
Pulse width
<
300us, duty cycle
<
2%.
Anachip Corp.
www.anachip.com.tw
3/8
Rev. 1.0
Sep 22, 2005
ANACHIP [ ANACHIP CORP ]
