AF9903M
2N and 2P-Channel Enhancement Mode Power MOSFET
Features
- Simple Drive Requirement
- Low On-Resistance
- Full Bridge Application on LCD Monitor Inverter
- Pb Free Plating Product
General Description
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SO-8 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.
Product Summary
CH
N
P
BV
DSS
(V)
35
-35
R
DS(ON)
(mΩ)
48
72
I
D
(A)
4.3
-3.6
Pin Assignments
N1G
N1D/P1D
N1S/N2S
N2G
1
2
3
4
8
7
6
5
Pin Descriptions
P1G
P1S/P2S
N2D/P2D
P2G
Pin Name
N1G
N1D/P1D
N1S/N2S
N2G
P2G
N2D/P2D
P1S/P2S
P1G
X
Packing
Description
Gate (NMOS1)
Drain(NMOS1) / Drain(PMOS1)
Source(NMOS1) / Source(NMOS2)
Gate (NMOS2)
Gate (PMOS2)
Drain(NMOS2) / Drain(PMOS2)
Source(PMOS1) / Source(PMOS2)
Gate (PMOS1)
SO-8
Ordering information
A X
Feature
F :MOSFET
PN
9903M X
Package
S: SO-8
Blank : Tube or Bulk
A : Tape & Reel
Block Diagram
P1S
P1G
P1N1D
N1G
N1S
N2S
P2N2D
N2G
P2S
P2G
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Sep 22, 2005
1/8
ANACHIP [ ANACHIP CORP ]
