AF9926N
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(Note 1)
Pulsed Drain Current
(Note 2)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
T
A
=25ºC
T
A
=70ºC
T
A
=25ºC
Rating
20
±12
6
4.8
26
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
W
W/ºC
ºC
ºC
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
(Note 1)
Max.
Maximum
62.5
Units
ºC/W
Electrical Characteristics
at T
J
=25ºC unless otherwise specified
Symbol
BV
DSS
∆BV
DSS
/
∆T
J
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Static Drain-Source On-Resistance
(Note 3)
Test Conditions
V
GS
=0V, I
D
=250uA
Reference to 25
o
C,
I
D
=1mA
V
GS
=4.5V, I
D
=6A
V
GS
=2.5V, I
D
=5.2A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=6A
V
DS
=20V, V
GS
=0V
V
DS
=20V, V
GS
=0V
V
GS
=12V
V
GS
=-12V
I
D
=6A,
V
DS
=20V,
V
GS
=5V
V
DS
=10V,
I
D
=1A,
R
G
=6Ω, V
GS
=5V
R
D
=10Ω
V
GS
=0V,
V
DS
=20V,
f=1.0MHz
Min.
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.03
-
-
20
-
-
-
-
23
4.5
7
30
70
40
65
1035
320
150
Max.
-
-
30
45
1.2
-
25
Units
V
V/
o
C
mΩ
V
S
uA
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
(T
J
=25
o
C)
Drain-Source Leakage Current
(T
J
=70
o
C)
Gate-Source Forward Leakage
Gate-Source Reverse Leakage
Total Gate Charge
(Note 3)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time
(Note 3)
Rise Time
Turn-Off Delay Time
Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
250
100
-100
35
7
11
60
140
80
130
-
-
-
nA
nC
ns
pF
Source-Drain Diode
Symbol
I
S
V
SD
Parameter
Test Conditions
Continuous Source Current (Body Diode) V
D
=V
G
=0V, V
S
=1.3V
T
J
=25ºC, I
S
=1.7A,
Forward On Voltage
(Note 3)
V
GS
=0V
2
o
Min.
-
-
Typ.
-
0.78
Max.
1.54
1.2
Unit
V
V
Note 1:
Surface mounted on 1 in copper pad of FR4 board, 135 C/W when mounted on Min. copper pad.
Note 2:
Pulse width limited by Max. junction temperature.
Note 3:
Pulse width
≤
300us, duty cycle
≤
2%.
Anachip Corp.
www.anachip.com.tw
2/6
Rev. 1.1 Sep 5, 2005
ANACHIP [ ANACHIP CORP ]
