AF9928N
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
(Note 1)
, at V
GS
=4.5V
Pulsed Drain Current
(Note 2)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
at T
A
=25ºC
at T
A
=70ºC
at T
A
=25ºC
Rating
20
±12
5
3.5
25
1
0.008
-55 to 150
-55 to 150
Units
V
V
A
A
W
W/ºC
ºC
ºC
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-Ambient
(Note 1)
2
o
Max.
Value
125
Units
o
C/W
Note 1:
Surface mounted on 1 in copper pad of FR4 board, 208 C/W when mounted on Min. copper pad.
Note 2:
Pulse width limited by Max. junction temperature.
Electrical Characteristics
at T
J
=25ºC (unless otherwise specified)
Symbol
BV
DSS
∆BV
DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Static Drain-Source On-Resistance
(Note 3)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
(Note 3)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time
(Note 3)
Rise Time
Turn-Off Delay Time
Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
GS
=0V, I
D
=250uA
Reference to 25
o
C,
I
D
=1mA
V
GS
=4.5V, I
D
=5A
V
GS
=2.5V, I
D
=2A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=5A
V
DS
=20V, V
GS
=0V,
T
J
=25ºC
V
DS
=20V, V
GS
=0V,
T
J
=70ºC
V
GS
=±12V
I
D
=5A,
V
DS
=10V,
V
GS
=4.5V
V
DS
=10V,
I
D
=1A,
R
G
=3.3Ω, V
GS
=4.5V
R
D
=10Ω
V
GS
=0V,
V
DS
=20V,
f=1.0MHz
Min.
20
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.02
-
-
-
21
-
-
-
15.9
1.5
7.4
6.2
9
30
11
530
245
125
Max.
-
-
23
29
-
-
1
25
±10
-
-
-
-
-
-
-
-
-
-
Units
V
V/
o
C
mΩ
mΩ
V
S
uA
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
I
S
V
SD
Parameter
Continuous Source Current (Body
Diode)
Forward On Voltage
(Note 3)
Test Conditions
V
D
=V
G
=0V, V
S
=1.2V
T
J
=25ºC , I
S
=5A,
V
GS
=0V
Min.
-
-
Typ.
-
-
Max.
0.83
1.2
Units
A
V
Note3:
Pulse width
≤
300us, duty cycle
≤
2%.
Anachip Corp.
www.anachip.com.tw
2/5
Rev. 1.1
Aug 11, 2005
ANACHIP [ ANACHIP CORP ]
