Analog Power
Electrical Characteristics
Parameter
Symbol
Test Conditions
Static
V
DS
= V
GS
, I
D
= 250 uA
(N-ch)
V
DS
= V
GS
, I
D
= -250 uA
(P-ch)
V
DS
= 0 V, V
GS
= ±20 V
V
DS
= 20 V, V
GS
= 0 V
(N-ch)
V
DS
= -20 V, V
GS
= 0 V
(P-ch)
V
DS
= 5 V, V
GS
= 10 V
(N-ch)
V
DS
= -5 V, V
GS
= -10 V
(P-ch)
V
GS
= 10 V, I
D
= 4.2 A
(N-ch)
V
GS
= 4.5 V, I
D
= 3.6 A
(N-ch)
V
GS
= -10 V, I
D
= -2.8 A
(P-ch)
V
GS
= -4.5 V, I
D
= -2.3 A
(P-ch)
V
DS
= 15 V, I
D
= 4.2 A
(N-ch)
V
DS
= -15 V, I
D
= -2.8 A
(P-ch)
I
S
= 1.4 A, V
GS
= 0 V
(N-ch)
I
S
= -1.2 A, V
GS
= 0 V
(P-ch)
Dynamic
b
N - Channel
V
DS
= 30 V, V
GS
= 4.5 V,
I
D
= 4.2 A
N - Channel
V
DD
= 30 V, R
L
= 7.1 Ω, I
D
= 4.2 A,
V
GEN
= 10 V, R
GEN
= 6 Ω
N - Channel
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
P - Channel
V
DS
= -30 V, V
GS
= 4.5 V,
I
D
= -2.8 A
P - Channel
V
DD
= -30 V, R
L
= 10.8 Ω,
I
D
= -2.8 A,
V
GEN
= -10 V, R
GEN
= 6 Ω
P - Channel
V
DS
= -15 V, V
GS
= 0 V, f = 1 MHz
Min
1
-1
Typ
AM4560C
Max
Unit
V
V
nA
uA
A
A
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
±100
1
-1
5
-5
82
100
190
250
25
28
0.78
-0.83
5
1.1
2.1
4
6
16
3
327
31
27
5
1.7
2.0
5
5
18
6
385
40
28
mΩ
mΩ
S
S
V
V
Drain-Source On-Resistance
a
r
DS(on)
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
ns
pF
nC
ns
pF
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
© Preliminary
2
Publication Order Number:
DS_AM4560C_1A
ANALOGPOWER [ ANALOG POWER ]
