APA2012
Thermal Characteristics
Symbol
θ
JA
Parameter
Thermal Resistance -Junction to Ambient
(Note 2)
WLCSP1.2x1.2-9
TDFN3x3-8
165
60
Typical Value
Unit
ο
C/W
Note 3 : Please refer to “ Layout Recommendation”, the ThermalPad on the bottom of the IC should soldered directly to the PCB's
ThermalPad area that with several thermal vias connect to the ground plan, and the PCB is a 2-layer, 5-inch square area with 2oz
copper thickness.
Recommended Operating Conditions
Symbol
V
DD
V
IH
V
IL
T
A
T
J
Supply Voltage
High Level Threshold Voltage
Low Level Threshold Voltage
Ambient Temperature Range
Junction Temperature Range
SD
SD
Parameter
Range
2.4 ~ 3
1~3
0 ~ 0.35
-40 ~ 85
-40 ~ 125
o
Unit
V
C
Electrical Characteristics
V
DD
=5V, GND=0V, T
A
= 25
ο
C (unless otherwise noted)
Symbol
I
DD
I
IH
I
IL
I
SD
F
osc
Parameter
Supply Current
SD High-Level Input
Curent
SD High-Level Input
Curent
VDD shutdown supply
current
Oscillator Frequency
P-Channel
MOSFET
N-Channel
MOSFET
P-Channel
MOSFET
N-Channel
MOSFET
No load
SD = V
DD
SD = 0V
SD = 0V
Test Conditions
APA2012
Min.
-
-
-
-
-
-
-
-
-
-
285/R
in
-
-
Typ.
1.8
50
1
1
300
200
200
220
220
1
300/R
in
170
4
Max.
-
-
-
2
-
-
-
mΩ
-
-
5
315/R
in
-
-
mV
V/V
o
Unit
mA
µA
µA
µA
kHz
V
DD
= 5V
R
DSON
Static drain-source
on-state resistance
V
DD
= 3.6V
V
os
A
V
OTP
Tstart-up
Output Offset Voltage
Gain
Over Temperature
Protection
Start up time
INN and INP connect together, A
V
=2V/V
R
in
in kΩ
C
ms
Copyright
©
ANPEC Electronics Corp.
Rev. A.3 - Oct., 2013
3
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
