AO3401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25.00
-10V
20.00
15.00
10.00
5.00
0.00
0.00
-2.5V
-4.5V
-3V
-I
D
(A)
-I
D
(A)
6
4
2
0
1.00
2.00
3.00
4.00
5.00
0
0.5
1
1.5
2
2.5
3
-V
DS
(Volts)
Fig 1: On-Region Characteristics
120
Normalized On-Resistance
100
R
DS(ON)
(m
Ω
)
80
60
40
20
0.00
V
GS
=-2.5V
V
GS
=-4.5V
1.8
1.6
1.4
1.2
1
0.8
2.00
4.00
6.00
8.00
10.00
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
1.0E+00
I
D
=-2A
-I
S
(A)
1.0E-01
1.0E-02
1.0E-03
1.0E-04
25°C
1.0E-05
1.0E-06
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
25°C
125°C
V
GS
=-2.5V
I
D
=-1A
I
D
=-3.5A, V
GS
=-4.5V
I
D
=-3.5A, V
GS
=-10V
-V
GS
(Volts)
Figure 2: Transfer Characteristics
125°C
25°C
8
10
V
DS
=-5V
V
GS
=-2V
V
GS
=-10V
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
190
170
150
R
DS(ON)
(m
Ω
)
130
110
90
70
50
30
10
125°C
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
