AO3416
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
I
D
(A)
15
10
5
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
30
Normalized On-Resistance
1.6
V
GS
=2.5V
I
D
=5.5A
1.4
V
GS
=1.8V
I
D
=5A
V
GS
=1.5V
2.5V
3.1V
4.5V
15
I
D
(A)
1.8V
25
V
DS
=5V
20
10
125°C
25°C
5
0
0
0.5
1
1.5
2
2.5
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
25
R
DS(ON)
(mΩ)
Ω
V
GS
=1.8V
20
V
GS
=2.5V
15
V
GS
=4.5V
1.2
1
17
5
2
V
GS
=4.5V
10
I
D
=6.5A
10
0
6
8
10
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
2
4
0.8
0
25
50
75
100
125
150
175
0
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
60
I
D
=6.5A
50
R
DS(ON)
(mΩ)
Ω
1.0E+01
1.0E+00
40
1.0E-01
I
S
(A)
40
125°C
30
1.0E-02
1.0E-03
125°C
25°C
20
25°C
10
0
4
6
8
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
2
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev 5: July 2010
www.aosmd.com
Page 3 of 5
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
