AO4616
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4616 uses advanced trench
technology MOSFETs to provide excellent
R
DS(ON)
and low gate charge. The
complementary MOSFETs may be used in
inverter and other applications.
Standard
Product AO4616 is Pb-free (meets ROHS
& Sony 259 specifications). AO4616L is a
Green Product ordering option. AO4616
and AO4616L are electrically identical.
Features
n-channel
V
DS
(V) = 30V
I
D
= 8.1A (V
GS
=10V)
R
DS(ON)
< 20mΩ (V
GS
=10V)
< 28mΩ (V
GS
=4.5V)
p-channel
-30V
-7.1A (V
GS
= -10V)
R
DS(ON)
< 25mΩ (V
GS
= -10V)
< 40mΩ (V
GS
= -4.5V)
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G2
D2
D1
SOIC-8
S2
G1
S1
n-channel
p-channel
Max p-channel
-30
±20
-7.1
-5.6
-30
2
1.28
-55 to 150
Units
V
V
A
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter
Symbol
Max n-channel
V
DS
Drain-Source Voltage
30
V
GS
Gate-Source Voltage
±20
Continuous Drain
T
A
=25°C
8.1
A
Current
T
A
=70°C
I
D
6.5
B
Pulsed Drain Current
I
DM
30
T
A
=25°C
2
P
D
T
A
=70°C
Power Dissipation
1.28
Junction and Storage Temperature Range T
J
, T
STG
-55 to 150
Thermal Characteristics: n-channel and p-channel
Parameter
t
≤
10s
Maximum Junction-to-Ambient
A
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
t
≤
10s
Maximum Junction-to-Ambient
A
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
W
°C
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
48
74
35
48
74
35
Max
62.5
110
60
62.5
110
40
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
