AO7405 参数 Datasheet PDF下载

AO7405

Electrical Characteristics (T

J

=25°C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS

BV

DSS

Drain-Source Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

Conditions

I

D

=-250µA, V

GS

=0V

V

DS

=-24V, V

GS

=0V

T

J

=55°C

V

DS

=0V, V

GS

=±12V

V

DS

=V

GS

I

D

=-250µA

V

GS

=-4.5V, V

DS

=-5V

V

GS

=-10V, I

D

=-1.6A

Static Drain-Source On-Resistance

T

J

=125°C

V

GS

=-4.5V, I

D

=-1A

V

GS

=-2.5V, I

D

=-1A

V

DS

=-5V, I

D

=-1.6A

-0.6

-10

115

195

135

3

190

4

-0.85

150

240

200

280

-1

-0.5

-1

Min

-30

-1

-5

±100

-1.4

Typ

Max

Units

V

µA

nA

V

A

mΩ

mΩ

mΩ

S

V

A

pF

pF

pF

Ω

nC

nC

nC

ns

ns

ns

ns

ns

nC

g

FS

V

SD

I

S

Forward Transconductance

Diode Forward Voltage

I

S

=-1A,V

GS

=0V

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C

iss

Input Capacitance

C

oss

Output Capacitance

C

rss

Reverse Transfer Capacitance

R

g

Gate resistance

SWITCHING PARAMETERS

Q

g

Total Gate Charge

Q

gs

Gate Source Charge

Q

gd

Gate Drain Charge

t

D(on)

Turn-On DelayTime

t

r

Turn-On Rise Time

t

D(off)

Turn-Off DelayTime

t

f

Turn-Off Fall Time

t

rr

Body Diode Reverse Recovery Time

Q

rr

V

GS

=0V, V

DS

=-15V, f=1MHz

V

GS

=0V, V

DS

=0V, f=1MHz

409

55

42

12

5.06

0.72

1.58

6.2

3.2

41.2

14.5

13.2

5.4

V

GS

=-4.5V, V

DS

=-15V, I

D

=-1A

V

GS

=-10V, V

DS

=-15V, R

L

=15Ω,

R

GEN

=3Ω

I

F

=-1A, dI/dt=100A/µs

Body Diode Reverse Recovery Charge I

F

=-1A, dI/dt=100A/µs

A: The value of R

θJA

is measured with the device mounted on 1in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C. The

value in any given application depends on the user's specific board design. The current rating is based on the t

≤

10s thermal resistance

rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R

θJA

is the sum of the thermal impedence from junction to lead R

θJL

and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80

µs

pulses, duty cycle 0.5% max.

2

E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C. The

SOA curve provides a single pulse rating.

Rev 2 : July 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.