AO8810
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO8810 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as a
load switch or in PWM applications. It is ESD protected.
AO8810L is offered in a lead-free package.
Standard
Product AO8810 is Pb-free (meets ROHS & Sony 259
specifications). AO8810L is a Green Product ordering
option. AO8810 and AO8810L are electrically identical.
Features
V
DS
(V) = 20V
I
D
= 7 A (V
GS
= 4.5V)
R
DS(ON)
< 20mΩ (V
GS
= 4.5V)
R
DS(ON)
< 24mΩ (V
GS
= 2.5V)
R
DS(ON)
< 32mΩ (V
GS
= 1.8V)
ESD Rating: 2000V HBM
TSSOP-8
Top View
D1/D2
S1
S1
G1
1
2
3
4
8
7
6
5
D1/D2
S2
S2
G2
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
20
±8
7
5.7
30
1.5
1
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
64
89
53
Max
83
120
70
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
