AOD403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
-10V
80
60
40
20
0
0
1
2
3
-4V
V
GS
=-2V
4
5
-6V
-5V
-I
D
(A)
-4.5V
60
50
40
30
20
10
0
2
2.5
3
3.5
4
4.5
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
25°C
125°C
V
DS
=-5V
-I
D
(A)
-V
DS
(Volts)
Fig 1: On-Region Characteristics
10
8
R
DS(ON)
(m
Ω
)
6
4
2
0
0
10
20
30
40
50
60
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
V
GS
=-20V
V
GS
=-10V
Normalized On-Resistance
1.6
I
D
=-20A
1.4
V
GS
=-20V
V
GS
=-10V
1.2
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
24
20
R
DS(ON)
(m
Ω
)
16
I
D
=-20A
-12.8
-15
1.0E+02
1.0E+01
1.0E+00
125°C
-I
S
(A)
1.0E-01
1.0E-02
1.0E-03
12
8
1.0E-04
25°C
125°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
4
1.0E-05
COMPONENTS IN25°C SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
LIFE 8
4
12
16
20
1.0E-06
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
-V
GS
(Volts)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Figure 5: On-Resistance vs. Gate-Source Voltage
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
