AOD4132
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4132 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. This device is ideally suited for use
as a low side switch in CPU core power conversion.
Standard Product AOD4132 is Pb-free (meets ROHS
& Sony 259 specifications).
Features
V
DS
(V) = 30V
I
D
= 85A (V
GS
= 10V)
R
DS(ON)
< 4mΩ (V
GS
= 10V)
R
DS(ON)
< 6mΩ (V
GS
= 4.5V)
UIS Tested
Rg,Ciss,Coss,Crss Tested
TO-252
D-PAK
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
B,G
Pulsed Drain Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
T
C
=25°C
Power Dissipation
Power Dissipation
B
C
Maximum
30
±20
85
63
200
30
112
100
50
2.5
1.6
-55 to 175
Units
V
V
A
A
mJ
W
W
°C
T
C
=25°C
G
B
T
C
=100°C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
14.2
39
0.8
Max
20
50
1.5
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
