AOD478/AOI478
100V N-Channel MOSFET
General Description
The AOD478/AOI478 combines advanced trench
MOSFET technology with a low resistance package to
provide extremely low R
DS(ON)
. This device is ideal for
boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
100V
11A
< 140mΩ
< 152mΩ
100% UIS Tested
100% R
g
Tested
TO252
DPAK
Top View
D
D
Bottom View
Top View
TO251A
IPAK
Bottom View
D
S
G
S
G
S
D
G
S
D
G
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
C
Maximum
100
±20
11
8
24
2.5
2
10
5
45
23
2.1
1.3
-55 to 175
Units
V
V
A
V
GS
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
, I
AR
E
AS
, E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
C
T
C
=100°
T
A
=25°
C
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
17
55
2.7
Max
25
60
3.3
Units
°
C/W
°
C/W
°
C/W
Rev 1: Nov. 2011
www.aosmd.com
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