GE
PACKAGE
FEATURES
!
Silicon MOSFET Technology
Operation from 24V to 50V
High Power Gain
Extreme Ruggedness
Internal Input and Output Matching
Excellent Thermal Stability
All Gold Bonding Scheme
Pb-free and RoHS Compliant
TYPICAL PERFORMANCE
MODE
FREQUENCY
(MHz)
VDD
(V)
IDQ
(mA)
Power
(W)
GAIN
(dB)
EFFICIENCY IRL
(%)
(dB)
Class AB
1150
50
100
250
19.5
48
20:1
Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with
RF pulse conditions of pulse width = 10 s and pulse duty cycle = 1%.
DESCRIPTION
2
The high power HVV1012- 50 device is an enhancement mode RF MOSFET power
transistor designed for pulsed applications in the L-Band from 1025MHz to 1150MHz. The
high voltage MOSFET technology produces over 50W of pulsed output power while
2
offering high gain, high efficiency, and ease of matching with a 50 V supply. The vertical
device structure assures high reliability and ruggedness as the device is specified to
withstand a 20:1 VSWR at all phase angles under full rated output power.
ORDERING INFORMATION
Device Part Number: HVV1012-250
Evaluation Kit Part Number: HVV1012-250-EK
REV. A
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 WWW.ADSEMI.COM
Specifications are subject to change without notice.
ASI [ ADVANCED SEMICONDUCTOR ]
