1N23WG
SILICON MIXER DIODE
DESCRIPTION:
PACKAGE STYLE DO- 23
The ASI 1N23WG is a Silicon Mixer
Diode Designed for Applications
Operating From 8.0 to 12.4 GHz.
FEATURES:
• High burnout resistance
• Low noise figure
• Hermetically sealed package
• Matched pairs available by adding
suffix “M” or “MR” for matched forward
and reverse
MAXIMUM RATINGS
IF
VR
20 mA
1.0 V
PDISS
TJ
2.0 (ERGS) @ TC = 25 °C
-55 °C to +150 °C
-55 °C to +150 °C
TSTG
NONE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIM
UNITS
dB
F = 9375 MHz
RL = 100 Ω
Plo = 1.0 mW
IF = 30 MHz
NFif = 1.5 dB
f = 1000 Hz
N
F
6.5
VSWR
ZIF
1.3
RL = 22 Ω
335
8.0
465
Ω
frange
12.4
GHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
ASI [ ADVANCED SEMICONDUCTOR ]