1N53
SILICON MIXER DIODE
PACKAGE STYLE DO- 36
DESCRIPTION:
The ASI 1N53 is a Silicon Mixer
Diode Designed for low noise
performance in
Ka-Band Applications Operating up to
35 GHz.
FEATURES:
•
Low Noise Fugure
•
Wider Bandwith than cartridge
diodes inX Band
NONE
CHARACTERISTICS TC = 25 O
C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIM
UNITS
dB
F = 9375 MHz
RL = 100 Ω
Plo = 1.0 mW
IF = 30 MHz
NFIif = 1.5 dB
N
F
13.1
VSWR
ZIF
1.6
RL = 100 Ω
f = 1000 Hz
NFIif = 1.5 dB
400
800
Ω
Test
F = 9375 MHz
Plo = 1.0 mW
IF = 30 MHz
35
GHz
Frequency RL = 100 Ω
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
ASI [ ADVANCED SEMICONDUCTOR ]