1N5709B
ABRUPT VARACTOR DIODE
PACKAGE STYLE DO-7
DESCRIPTION:
The
ASI 1N5709B
is an Abrupt Varactor
Diode, designed for general purpose
applications.
MAXIMUM RATINGS
I
R
V
R
P
DISS
T
J
T
STG
θ
JC
20 nA
70 V
400 mW @ T
A
= 25 °C
-65 °C to +175 °C
-65 °C to +200 °C
250 °C/W
NONE
CHARACTERISTICS
SYMBOL
V
BR
I
R
C
T
C
T4
/C
T60
Q
I
R
= 10
µA
V
R
= 60 V
T
C
= 25 °C
TEST CONDITIONS
MINIMUM
65
TYPICAL
MAXIMUM
20
UNITS
V
nA
µA
pF
--
--
T
A
= 150 °C
V
R
= 4.0 V
V
R
= 4.0 V/V
R
= 60 V
V
R
= 4.0 V
f = 1.0 MHz
f = 1.0 MHz
f = 50 MHz
77.9
3.2
150
20
86.1
3.4
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1202
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
