2N3866A
NPN SILICON HIGH FREQUENCY TRANSISTOR
PACKAGE STYLE TO-39
DESCRIPTION:
The
2N3866A
is a High Frequency
Transistor Designed for Amplifier and
Oscillator Applications.
MAXIMUM RATINGS
I
C
V
CE
P
DISS
T
J
T
STG
θ
JC
O
O
400 mA
30 V
5.0 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +200 C
35 C/W
O
O
O
O
1 = Emitter
2 = Base
3 = Collector
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CER
BV
EBO
I
CEX
I
CEO
I
EBO
h
FE
V
CE(SAT)
f
t
C
OB
G
PE
η
c
I
C
= 5.0 mA
I
C
= 5.0 mA
I
C
= 100
µA
V
CE
= 55 V
V
CE
= 30 V
V
CE
= 28 V
V
EB
= 3.5 V
V
CE
= 5.0 V
I
C
= 100 mA
V
CE
= 15 V
V
CB
= 28 V
V
CC
= 28 V
T
C
= 25 C
O
NONE
TEST CONDITIONS
R
BE
= 10
Ω
V
BE
= -1.5 V
V
BE
= -1.5 V
T
C
= 200 C
O
MINIMUM
30
55
3.5
TYPICAL
MAXIMUM
UNITS
V
V
V
100
500
20
100
µ
A
µ
A
µ
A
---
V
MHz
I
C
= 50 mA
I
C
= 360 mA
I
B
= 20 mA
I
C
= 50 mA
f = 200 MHz
f = 1.0 MHz
P
out
= 1.0 W
f = 400 MHz
25
5.0
200
1.0
800
3.0
10
45
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1202
•
FAX (818) 765-3004
Specifications are subject to change without notice.
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