2N4333
SILICON CONTROLLED RECTIFIER (SCR)
DESCRIPTION:
The
ASI 2N4333
is Designed for
General Purpose Low Current Power
Control Applications.
MAXIMUM RATINGS
I
f
V
FOM
/V
ROM
P
GM
P
G(AVG)
V
GRM
T
J
T
STG
θ
JC
390 mA
60 V
100 mW @ T
A
= 25 °C
10 mW @ T
A
= 25 °C
5.0 V
-65 °C to +125 °C
-65 °C to +150 °C
75 °C/W
PACKAGE STYLE TO-92
1 = CATHODE
2 = GATE
3 = ANODE
NONE
CHARACTERISTICS
SYMBOL
I
DRM
/I
RRM
I
GT
V
GT
V
D
= 7.0 V
V
D
= 7.0 V
T
C
= 25 °C
TEST CONDITIONS
V
DRM
/V
RRM
= 60 V
R
GK
= 1.0 KΩ
R
L
= 100
Ω
R
L
= 100
Ω
MINIMUM TYPICAL MAXIMUM
1.0
10
0.8
UNITS
µ
A
µ
A
V
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
